Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application

The new CoolMOS/sup TM/ C3 generation combines extremely high on-state conductivity with ultra fast switching speed at full pulse current capability. In the first generation of CoolMOS/sup TM/, due to the small chip size, one had a reduction of the saturation current at the cell level. This technique results in a reduced current capability of the device at low gate voltages. In many applications, the outstanding switching performance of the cannot be utilized due to the dynamic behaviour of CoolMOS/sup TM/ the diode. For this reason ,a whole family of SiC-diodes has been developed to get the ideal matched pair of switch and ultra fast diodes. The goal of ultra low loss applications in SMPS, power factor correction circuits and motor control units will be achieved completely.

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