论文信息 - Self-aligned CoSi/sub 2/ for 0.18 /spl mu/m and below

Self-aligned CoSi/sub 2/ for 0.18 /spl mu/m and below

CoSi/sub 2/ is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi/sub 2/ technologies are discussed. The scalability of the process of record, the Co/Ti(cap) process are presented for 0.18 /spl mu/m and below.

[1] D. Fraser,et al. Growth of epitaxial CoSi2 on (100)Si , 1991 .

[2] A manufacturable process to improve thermal stability of 0.25-/spl mu/m cobalt silicided poly gate , 1995 .

[3] P. P. Apte,et al. Use of a TiN cap to attain low sheet resistance for scaled TiSi2 on sub-half-micrometer polysilicon lines , 1996, IEEE Electron Device Letters.

[4] The control and impact of processing ambient during RTP , 1998 .

[5] A. Lauwers,et al. The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines , 1998 .

[6] In-Line Ambient Impurity Measurement on a Rapid Thermal Process Chamber by Atmospheric Pressure Ionisation Mass Spectrometry , 1998 .