High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence

The authors study 850nm GaAs∕AlGaAs longitudinal photonic band crystal lasers with a vertical far field divergence of 9° (full width at half maximum). Differential quantum efficiency of 95% is achieved at a cavity length of 500μm. A total optical output power from broad area multimode devices was up to 6.3W and a maximum continuous wave single mode power from narrow stripe devices was 270mW.

[1]  N. Ledentsov,et al.  High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence , 2005, IEEE Journal of Quantum Electronics.

[2]  I. Tarasov,et al.  High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures , 2006 .

[3]  Mikhail V. Maximov,et al.  Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide , 2003 .

[4]  Motoharu Miyashita,et al.  High-power high-efficiency 660-nm laser diodes for DVD-R/RW , 2003 .

[5]  Y. Kokubo,et al.  High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping , 1991 .

[6]  Shingo Kameyama,et al.  High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current , 2004 .

[7]  P. Smowton,et al.  650 nm lasers with narrow far-field divergence , 1998, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).

[8]  Nikolai N. Ledentsov,et al.  Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence , 2006 .

[9]  Nikolai N. Ledentsov,et al.  Novel concepts for injection lasers , 2002 .

[10]  K. Shinozaki,et al.  High‐power operation of 830‐nm AlGaAs laser diodes , 1989 .

[11]  Mikhail V. Maximov,et al.  High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern , 2005 .

[12]  Bernd Sumpf,et al.  High-power 808 nm lasers with a super-large optical cavity , 2005 .

[13]  Mikhail V. Maximov,et al.  Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal , 2006 .

[14]  Soohaeng Cho,et al.  660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle , 2005 .

[15]  Nikolai N. Ledentsov,et al.  Low divergence edge‐emitting laser with asymmetric waveguide based on one‐dimensional photonic crystal , 2005 .

[16]  R. Staske,et al.  High-power diode lasers with small vertical beam divergence emitting at 808 nm , 2001 .