Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
暂无分享,去创建一个
Tadao Ishibashi | Kenji Kurishima | Hiroki Nakajima | T. Ishibashi | K. Kurishima | Takashi Kobayashi | Yutaka Matsuoka | Takashi Kobayashi | H. Nakajima | Y. Matsuoka
[1] R. N. Nottenburg,et al. High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors , 1989 .
[2] H. Shigematsu,et al. InAlAs/InGaAs double heterojunction bipolar transistors with a collector launcher structure for high-speed ECL applications , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[3] G. E. Stillman,et al. Electron transport in InP at high electric fields , 1983 .
[4] Y. Chen,et al. Subpicosecond InP/InGaAs heterostructure bipolar transistors , 1989, IEEE Electron Device Letters.
[5] K. Kurishima,et al. Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures , 1992 .
[6] T. Ishibashi,et al. Hot electron injection in InAlGaAs/InGaAs ballistic collection transistors , 1992 .
[7] D. Pavlidis,et al. Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors , 1993 .
[8] K. Kurishima,et al. Electron Velocity Overshoot Effect in Collector Depletion Layers of InP/InGaAs Heterojunction Bipolar Transistors , 1992 .
[9] M. Panish,et al. High-speed InGaAs(P)/InP double-heterostructure bipolar transistors , 1987, IEEE Electron Device Letters.
[10] K. Kurishima,et al. InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition , 1991 .
[11] B. Jalali,et al. Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field , 1990 .
[12] S. Chandrasekhar,et al. Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors , 1992 .
[13] P. Dodd,et al. Minority electron transport in InP/InGaAs heterojunction bipolar transistors , 1992 .
[14] B. Jalali,et al. Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport , 1992 .
[15] T. Ishibashi,et al. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure , 1988 .
[16] Dan Ritter,et al. Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors , 1992 .
[17] H. Ichino,et al. Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[18] P. Pavan,et al. Negative base current and impact ionization phenomena in AlGaAs/GaAs HBTs , 1992, IEEE Electron Device Letters.