Numerical investigations of geometric effects on flow and thermal fields in a horizontal CVD reactor

Abstract This paper investigates numerically the effects of tilted angle of the susceptor and the upper wall and of addition of a rib on the three-dimensional (3-D) flow structures and heat transfer characteristics in a model horizontal chemical vapor deposition (CVD) reactor with a circular heated disk which simulates a 12 in wafer. The Grashof (Gr) and Reynolds (Re) numbers are kept constant at 8.13×10 4 and 100, respectively. Computed flow structures and thermal distributions indicate that as the tilted angle of the susceptor and the upper wall is increased from 0° to 9°, the sizes of transverse (return flow) and longitudinal rolls are reduced and the uniformity of heat flux distribution is improved, which would yield better film homogeneity during CVD processing. The retardation of the growth of thermal boundary layer leads to an increase of the heat flux and hence of the deposition rate. With placing a rib to the upper wall of the reactor, the heat flux on the susceptor is increased but it has a detrimental effect on the uniformity.

[1]  J. V. D. Ven,et al.  Gas phase depletion and flow dynamics in horizontal MOCVD reactors , 1986 .

[2]  W. Chiu,et al.  Flow structure and heat transfer in a horizontal converging channel heated from below , 2000 .

[3]  Chris R. Kleijn,et al.  Computational modeling of transport phenomena and detailed chemistry in chemical vapor deposition : a benchmark solution , 2000 .

[4]  Klavs F. Jensen,et al.  Complex flow phenomena in MOCVD reactors: I. Horizontal reactors , 1986 .

[5]  W. Aung,et al.  Secondary flow and enhancement of heat transfer in horizontal parallel-plate and convergent channels heating from below , 1999 .

[6]  S. Patankar,et al.  Three-Dimensional Mixed Convection in a Horizontal Chemical Vapor Deposition Reactor , 1993 .

[7]  Arthur E. Bergles,et al.  Heat Transfer Enhancement—The Encouragement and Accommodation of High Heat Fluxes , 1997 .

[8]  Tsing-Fa Lin,et al.  Delayed onset of return flow by substrate inclination in model horizontal longitudinal MOCVD processes , 2005 .

[9]  S. Vanka,et al.  Parametric effects on thin film growth and uniformity in an atmospheric pressure impinging jet CVD reactor , 2004 .

[10]  R. Shah,et al.  Heat transfer surface enhancement through the use of longitudinal vortices: a review of recent progress , 1995 .

[11]  A. P. Peskin,et al.  Gallium arsenide growth in a pancake MOCVD reactor 1 Contribution of the US Government. Not subject , 1998 .

[12]  Kyoung-Woo Park, Hi-Yong Pak,et al.  CHARACTERISTICS OF THREE-DIMENSIONAL FLOW, HEAT, AND MASS TRANSFER IN A CHEMICAL VAPOR DEPOSITION REACTOR , 2000 .

[13]  Chris R. Kleijn,et al.  Return flows in horizontal MOCVD reactors studied with the use of TiO2 particle injection and numerical calculations , 1989 .

[14]  Khalil Khanafer,et al.  Computational modeling of transport phenomena in chemical vapor deposition , 2005 .

[15]  Joe F. Thompson,et al.  Numerical grid generation , 1985 .

[16]  C. Kleijn,et al.  A STUDY OF 2- AND 3-D TRANSPORT PHENOMENA IN HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTORS , 1991 .

[17]  John N. Shadid,et al.  Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations , 1999 .

[18]  D. Fotiadis,et al.  Thermophoresis of solid particles in horizontal chemical vapor deposition reactors , 1990 .

[19]  F. Incropera,et al.  Regions of heat transfer enhancement for laminar mixed convection in a parallel plate channel , 1990 .

[20]  T. Cheng,et al.  Computation of three-dimensional flow and thermal fields in a model horizontal chemical vapor deposition reactor , 2006 .

[21]  Gerold W. Neudeck,et al.  Mathematical Modeling of Epitaxial Silicon Growth in Pancake Chemical Vapor Deposition Reactors , 1991 .

[22]  Mark E. Orazem,et al.  Numerical study of the influence of reactor design on MOCVD with a comparison to experimental data , 1991 .

[23]  Chris R. Kleijn,et al.  A Mathematical Model of the Hydrodynamics and Gas‐Phase Reactions in Silicon LPCVD in a Single‐Wafer Reactor , 1991 .

[24]  R. Greif,et al.  A Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor , 1987 .

[25]  David B. Graves,et al.  Modeling and Analysis of Low Pressure CVD Reactors , 1983 .

[26]  J. P. V. Doormaal,et al.  ENHANCEMENTS OF THE SIMPLE METHOD FOR PREDICTING INCOMPRESSIBLE FLUID FLOWS , 1984 .

[27]  T. J. Mountziaris,et al.  Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs , 1996 .

[28]  C. Kleijn,et al.  Transport Phenomena in Tungsten LPCVD in a Single‐Wafer Reactor , 1991 .

[29]  R. Shah Laminar Flow Forced convection in ducts , 1978 .

[30]  Klavs F. Jensen,et al.  Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptness , 1987 .