Carbon Nanotube Field-effect Transistors-The Importance of Being Small
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[1] Jing Guo,et al. Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors , 2002, Digest. International Electron Devices Meeting,.
[2] J. Knoch,et al. High performance of potassium n-doped carbon nanotube field-effect transistors , 2004, cond-mat/0402350.
[3] S. Luryi. Quantum capacitance devices , 1988 .
[4] Williamson,et al. Quantum ballistic and adiabatic electron transport studied with quantum point contacts. , 1991, Physical review. B, Condensed matter.
[5] J. Nagao,et al. Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses , 1996 .
[6] Daniel S. Fisher,et al. Relation between conductivity and transmission matrix , 1981 .
[7] Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors , 2002, Digest. International Electron Devices Meeting,.
[8] S. Datta. Electronic transport in mesoscopic systems , 1995 .
[9] A. Messiah. Quantum Mechanics , 1961 .
[10] K. K. Young. Short-channel effect in fully depleted SOI MOSFETs , 1989 .
[11] S. Datta,et al. A simple quantum mechanical treatment of scattering in nanoscale transistors , 2003 .
[12] R Martel,et al. Carbon nanotubes as schottky barrier transistors. , 2002, Physical review letters.
[13] M. Radosavljevic,et al. Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. , 2004, Physical review letters.
[14] Hongjie Dai,et al. Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters , 2000 .
[15] S. Tans,et al. Molecular transistors: Potential modulations along carbon nanotubes , 2000, Nature.
[16] J. Plummer,et al. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's , 1997, IEEE Electron Device Letters.
[17] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[18] M. Lundstrom. Fundamentals of carrier transport , 1990 .
[19] Yuan Taur,et al. Fundamentals of Modern VLSI Devices , 1998 .
[20] S. Wind,et al. Field-modulated carrier transport in carbon nanotube transistors. , 2002, Physical review letters.
[21] S. Datta. Nanoscale device modeling: the Green’s function method , 2000 .
[22] David L. Pulfrey,et al. Quantum capacitance in nanoscale device modeling , 2004 .
[23] H. Flietner,et al. The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor Contact , 1972 .
[24] K. Likharev,et al. Nanoscale field-effect transistors: An ultimate size analysis , 1997, cond-mat/9706026.
[25] Gerhard Klimeck,et al. Single and multiband modeling of quantum electron transport through layered semiconductor devices , 1997 .
[26] M. Radosavljevic,et al. Tunneling versus thermionic emission in one-dimensional semiconductors. , 2004, Physical review letters.
[27] J. Knoch,et al. Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors , 2002 .
[28] Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI , 2002 .
[29] An extended model for carbon nanotube field-effect transistors , 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..
[30] K. F. Lee,et al. Scaling the Si MOSFET: from bulk to SOI to bulk , 1992 .
[31] Stefan Heinze,et al. Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors , 2003 .
[32] Y.-M. Lin,et al. Novel structures enabling bulk switching in carbon nanotube FETs , 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..
[33] Mark S. Lundstrom,et al. Theory of ballistic nanotransistors , 2003 .