A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS
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Y. Taur | B. Davari | J. Warnock | Y. Taur | A. Megdanis | W. Noble | J. Warnock | B. Davari | C. Koburger | T. Furukawa | J. Mauer | T. Furukawa | A. Megdanis | W. Noble | J. Mauer | C. Koburger
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