A 2.1/2.6 GHz dual-band high-efficiency GaN HEMT amplifier with harmonic reactive terminations
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[1] R. Ishikawa,et al. 5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order , 2012, IEEE Microwave and Wireless Components Letters.
[2] Yongchae Jeong,et al. A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network , 2012, IEICE Trans. Electron..
[3] Fadhel M. Ghannouchi,et al. Concurrent Dual-Band Class-F Load Coupling Network for Applications at 1.7 and 2.14 GHz , 2008, IEEE Transactions on Circuits and Systems II: Express Briefs.
[4] Nathan O. Sokal,et al. Class of High-Efficiency Tuned Switching Power Amplifiers , 2009 .
[5] P. Colantonio,et al. A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier , 2008, IEEE Transactions on Microwave Theory and Techniques.
[6] Kazuhiko Honjo,et al. A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits , 2000 .
[7] P. Colantonio,et al. A new design strategy for multi frequencies passive matching networks , 2007, 2007 European Microwave Conference.
[8] F. Raab. Class-F power amplifiers with maximally flat waveforms , 1997 .
[9] Choon Sik Cho,et al. Concurrent Dual-Band Class-E Power Amplifier Using Composite Right/Left-Handed Transmission Lines , 2007, IEEE Transactions on Microwave Theory and Techniques.