A new measurement method of MOS transistor parameters

Abstract A new method for the extraction of some of the main physical parameters characterizing an MOS process is presented. This method requires current measurements for small drain voltages to be performed at least on two transistors which differ only for the channel length. In particular it makes it possible to determine the threshold voltage, the channel shortening, the drain and source parasitic resistances and the carrier mobility in the channel. The method is primarily intended for usage with a computerized measuring system.

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