Doping in quantum cascade lasers. I. InAlAs–InGaAs∕InP midinfrared devices

The effect of the doping densities on the performance of 9μm InAlAs–InGaAs∕InP quantum cascade lasers is presented. Doping densities varying between 1.0×1011 and 2.6×1011cm−2 were investigated. In this range, a linear increase in both threshold and maximum current density with sheet carrier density is observed. These effects are explained using a model based on resonant tunneling transport and rate equations.

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