Threshold kinetic processes for t-C4F9I

Abstract A laser oscillator system was used to study the kinetics of t -C 4 F 7 I relative to n -C 3 F 7 I. Modeling shows that the rapid R + I ∗ recombination results in near steady state gain levels being achieved for t -C 4 F 9 I while the n -C 3 F 7 I exhibits strong transient behavior. The estimated recombination rate for t -C 4 F 9 I is much larger than the published value.