A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs
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Barry R. Allen | K. L. Tan | J. Velebir | D. C. Streit | A. Freudenthal | Po-Hsin Liu | Huei Wang | K. S. Stolt | Richard Lai | R. M. Dia | A. C. Han | J. Lee | M. Bidenbender
[1] G. S. Dow,et al. High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology , 1992 .
[2] G. S. Dow,et al. An ultra low noise W-band monolithic three-stage amplifier using 0.1- mu m pseudomorphic InGaAs/GaAs HEMT technology , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.
[3] T.H. Chen,et al. A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier , 1992, GaAs IC Symposium Technical Digest 1992.
[4] P. Liu,et al. 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs , 1990, IEEE Electron Device Letters.
[5] G. S. Dow,et al. A W-band monolithic downconverter , 1991 .
[6] G. S. Dow,et al. State-of-the-art low noise performance of 94 GHz monolithic amplifiers using 0.1 mu m InGaAs/GaAs pseudomorphic HEMT technology , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[7] P. Chao,et al. A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT , 1991 .
[8] H. Wang,et al. A W-band, high-gain, low-noise amplifier using PHEMT MMIC , 1992, IEEE Microwave and Guided Wave Letters.
[9] G. S. Dow,et al. Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs , 1992, GaAs IC Symposium Technical Digest 1992.