Bimetallic heatsinks for temperature compensation of diode lasers: prospects for microfabrication

We demonstrate that temperature-dependent strain may be used to stabilize the wavelength, threshold current, and differential efficiency, of a 1.55 /spl mu/m multiquantum well diode laser mounted on a bimetallic heatsink. We have obtained nearly complete stabilization of the modal wavelength, and an equivalent threshold current characteristic temperature of 133 K, over the temperature range of 20-70/spl deg/C. We describe the principles of temperature compensation using thermal stress, review our results, and discuss the problems that remain to be solved.

[1]  L. Coldren,et al.  Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MQW diode laser mounted on a bimetallic heatsink , 1996 .

[2]  M. E. Heimbuch,et al.  Reduced temperature sensitivity of the wavelength of a diode laser in a stress-engineered hydrostatic package , 1996 .

[3]  J. Binsma,et al.  High performance buried heterostructure /spl lambda/=1.5 /spl mu/m InGaAs/AlGaInAs strained-layer quantum well laser diodes , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[4]  W. Ring,et al.  Optimization of highly efficient uncoated strained 1300-nm InGaAsP MQW lasers for uncooled high-temperature operation , 1996, Optical Fiber Communications, OFC..

[5]  P. Enders,et al.  8-band k.p theory of the material gain of strained tetrahedral semiconductors: application to 1.3 /spl mu/m-InGaAsP lasers subject to additional external uniaxial stress , 1996 .

[6]  D. L. Williams,et al.  Wavelength stable uncooled fibre grating semiconductor laser for use in an all optical WDM access network , 1996 .

[7]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[8]  A. Kasukawa,et al.  Very high characteristic temperature and constant differential quantum efficiency 1.3-/spl mu/m GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror , 1995 .

[9]  Larry A. Coldren,et al.  Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers , 1994 .

[10]  A. Kasukawa,et al.  Very high characteristic temperature and constant differential quantum efficiency 1.3 mu m GaInAsP/InP strained-layer quantum well lasers by use of temperature dependent reflectivity (TDR) mirror , 1994 .

[11]  Rajaram Bhat,et al.  High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications , 1994 .

[12]  T. P. Lee,et al.  Strained Layer Quantum Well Lasers for Optical Communications , 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

[13]  C. Menoni,et al.  Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa , 1993 .

[14]  Norihiro Iwai,et al.  High temperature operation of 1.3 mu m GaInAsP/InP GRINSCH strained-layer quantum well lasers , 1993 .

[15]  L. Coldren,et al.  Chapter 1 – OPTICAL GAIN IN III–V BULK AND QUANTUM WELL SEMICONDUCTORS , 1993 .

[16]  C. Zah,et al.  1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition , 1992 .

[17]  S. Tiwari,et al.  Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum‐well lasers , 1992 .

[18]  Charles S. Adams,et al.  Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers , 1988 .

[19]  G. E. Pikus,et al.  Symmetry and strain-induced effects in semiconductors , 1974 .