论文信息 - Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers

Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers

We report on an experimental verification of a phenomenological model describing high-power and high-temperature operation of a compressively strained, InGaAsP multiple quantum well ridge-waveguide laser. The model, based on an assumption that mainly crystal heating defines optical output power saturation, has been proved to adequately describe the experimental results on maximum operating temperature of the lasers.

J. D. Evans | J. Simmons | S. Smetona | T. Makino | B. Elenkrig

[1] T. Makino,et al. MAXIMUM OUTPUT POWER AND MAXIMUM OPERATING TEMPERATURE OF QUANTUM WELL LASERS , 1997 .

[2] John G. Simmons,et al. Temperature sensitivity of strained multiple quantum well long-wavelength semiconductor lasers: root cause analysis and the effects of varying device structure , 1997, Photonics West.

[3] S. Luryi,et al. Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers , 1996 .

[4] T. Hirono,et al. Dominant mechanism for limiting the maximum operating temperature of InP‐based multiple‐quantum‐well lasers , 1996 .

[5] R. D. Yadvish,et al. High temperature characteristics of InGaAsP/InP laser structures , 1993 .

[6] D.M. Byrne,et al. A laser diode model based on temperature dependent rate equations , 1989, IEEE Photonics Technology Letters.

[7] M. Amann. Thermal resistance of ridge‐waveguide lasers mounted upside down , 1987 .

[8] Eli Yablonovitch,et al. Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .