X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates
暂无分享,去创建一个
[1] Nibir K. Dhar,et al. Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing , 2008 .
[2] M. Groenert,et al. Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates , 2008 .
[3] J. D. Benson,et al. Characterization of cross-hatch morphology of MBE (211) HgCdTe , 2001 .
[4] Peter Capper,et al. Properties of Narrow-Gap Cadmium-Based Compounds , 1995 .
[5] P. W. Norton,et al. Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11-18 μm applications , 1991 .
[6] S. Qadri,et al. X‐ray determination of dislocation density in epitaxial ZnCdTe , 1985 .
[7] J. Kennedy,et al. Evidence for bond strengthening in Cd1−xZnxTe (x=0.04) , 1985 .
[8] M. Straumanis,et al. Lattice Parameters, Thermal Expansion Coefficients, Phase Width, and Perfection of the Structure of GaSb and InSb , 1965 .
[9] P. Norton. HgCdTe Infrared Detectors , 2002 .