Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy

We report the molecular beam epitaxial growth of InAs0.22Sb0.78 on semi‐insulating GaAs substrates, and the fabrication and characterization of photoconductance detectors.

[1]  C. Bethea,et al.  GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe , 1988 .

[2]  Kwong-Kit Choi,et al.  Bound-to-extended state absorption GaAs superlattice transport infrared detectors , 1988 .

[3]  L. R. Dawson,et al.  Demonstration of an InAsSb strained‐layer superlattice photodiode , 1988 .

[4]  Kwong-Kit Choi,et al.  Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range , 1987 .

[5]  G. C. Osbourn,et al.  InAsSb strained‐layer superlattices for long wavelength detector applications , 1984 .

[6]  Kwong-Kit Choi,et al.  Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy , 1987 .

[7]  S. Bedair,et al.  Growth of InAs1−xSbx (0, 1985 .

[8]  Choi,et al.  Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain. , 1987, Physical review. B, Condensed matter.

[9]  C. Bethea,et al.  Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum , 1988 .

[10]  R. M. Biefeld.  The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition , 1986 .

[11]  Kwong-Kit Choi,et al.  Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity , 1987 .

[12]  J. C. Woolley,et al.  OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS , 1964 .

[13]  Salah M. Bedair,et al.  p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition , 1985 .

[14]  F. Capasso,et al.  High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectors , 1986 .

[15]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[16]  K. W. Wecht,et al.  Long-wavelength photoluminescence of InAs1−xSbx(0 , 1988 .

[17]  Choi,et al.  Photoexcited coherent tunneling in a double-barrier superlattice. , 1987, Physical review letters.

[18]  J. Woolley,et al.  Solid Solution in A IIIBV Compounds , 1958 .

[19]  Roger J. Malik,et al.  High‐detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector , 1988 .

[20]  Kwong-Kit Choi,et al.  New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices , 1987 .

[21]  C. Bethea,et al.  Negative differential photoconductance in an alternately doped multiple quantum well structure , 1988 .

[22]  C. Bethea,et al.  Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling , 1987 .