High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance

A vanadium dioxide (VO2) thin film planer-type junction fabricated on an Al2O3 (0001) substrate, possessing an infinite negative-differential-resistance region in their current-voltage characteristics, acts as an oscillator of high efficiency. A voltage application to the pair of a VO2 junction and a load resistor drives an oscillation of the junction voltage only when the combination of the source voltage and the load resistance satisfies certain conditions. On the basis of the experimental results, with the source voltage and the load resistance systematically varied, the mechanism of the oscillation was revealed to be the alternate occurrence of an electric-field-induced resistance switching in the VO2 junction and a rapid dielectric relaxation in the load resistor.

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