论文信息 - Edge effects in phase-shifting masks for 0.25-µm lithography

Edge effects in phase-shifting masks for 0.25-µm lithography

The impact on image quality of scattering from phase-shifter edges and of interactions between phase-shifter and chrome edges is assessed using rigorous electromagnetic simulation. Effects of edge taper in phase-shift masks, spacing between phase-shifter and chrome edges, small outrigger features with a trench phase-shifter, and of the repair of phase defects by etching to 360 degree(s) are considered. Near field distributions and diffraction efficiencies are examined and images are compared with more approximate results from the commonly used Hopkins' theory of imaging.

Andrew R. Neureuther | Alfred K. K. Wong | A. Neureuther | A. Wong

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