Non volatile memory device and operating method thereof

Fire relates to a volatile memory device and the operation thereof, when the number of normal cells and the plurality of secondary cell, the page area with the page areas of the program object programmed to a voltage greater than the reference voltage of the cells of the cell containing the generated one-bit path and bit path detection unit for outputting a signal, the first program operation of one bit pass signal, the program pulse application number storage unit for storing the number of times of the applied outputted up to the time the program pulse to the plurality of secondary cell in on the page area, and based on the number of application times of the stored program pulse to a plurality of secondary cells to provide a non-volatile memory device having a setting unit for setting a second start program, the program start voltage for the program operating voltage of a page area.