Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation
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[1] Z. Çelik-Butler,et al. Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors , 2015 .
[2] H. Barnaby,et al. Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides , 2011, IEEE Transactions on Nuclear Science.
[3] Ying Wang,et al. Research of Single-Event Burnout in Power UMOSFETs , 2013, IEEE Transactions on Electron Devices.
[4] S. Liu,et al. Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs , 2008, IEEE Transactions on Nuclear Science.
[5] H. Hughes,et al. Radiation effects and hardening of MOS technology: devices and circuits , 2003 .
[6] K. Isoird,et al. Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors , 2014 .
[7] L. Changshi. Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays , 2003 .
[8] P. Lenahan,et al. The effect of deposition conditions on the radiation tolerance of BPSG films , 1996 .