论文信息 - Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy - 字舞流文

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

M. Dudley | K. Kisslinger | B. Raghothamachar | X. Tong | Yafei Liu | Hongyu Peng | Tuerxun Ailihumaer

[1] M. Dudley,et al. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography , 2020 .

[2] M. Dudley,et al. Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers , 2020, Journal of Electronic Materials.

[3] T. Fukui,et al. Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer , 2016 .

[4] G. B. Stringfellow,et al. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine , 2006 .

[5] E. F. Schubert,et al. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications , 2004 .

[6] K. Streubel,et al. High brightness AlGaInP light-emitting diodes , 2002 .

[7] C. P. Kuo,et al. Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes , 1997 .

[8] G. B. Stringfellow,et al. Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P , 1991 .

[9] S. Stock,et al. The measurement of strain fields by X-ray topographic contour mapping , 1986 .