The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.

[1]  R. E. Hayes,et al.  Optoelectronic device simulation of Bragg reflectors and their influence on surface-emitting laser characteristics , 1998 .

[2]  Shiro Sakai,et al.  Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition , 2000 .

[3]  R. Street,et al.  Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .

[4]  M. G. Cheong,et al.  Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition , 2002 .

[5]  H. Amano,et al.  P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .

[6]  Michael Heuken,et al.  Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs , 2001 .

[7]  S. Nakamura,et al.  Thermal Annealing Effects on P-Type Mg-Doped GaN Films , 1992 .

[8]  Eugene E. Haller,et al.  Local vibrational modes of the Mg–H acceptor complex in GaN , 1996 .

[9]  Peter Blood,et al.  Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm , 2003, Applied Physics Letters.

[10]  Jörg Neugebauer,et al.  Role of hydrogen in doping of GaN , 1996 .

[11]  Hadis Morkoç,et al.  Nitride Semiconductors and Devices , 1999 .

[12]  Chih-Chung Yang,et al.  Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser , 2001 .

[13]  Van de Walle CG,et al.  Hydrogen in GaN: Novel aspects of a common impurity. , 1995, Physical review letters.

[14]  A. Satake,et al.  Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes , 2001 .