We demonstrate the formation of Ta2O5 nanodimple arrays on technologically relevant non-native substrates through a simple anodization and annealing process. The anodizing voltage determines the pore diameter (25-60 nm), pore depth (2-9 nm), and rate of anodization (1-2 nm/s of Ta consumed). The formation of Ta dimples after delamination of Ta2O5 nanotubes occurs within a range of voltages from 7 to 40 V. The conversion of dimples from Ta into Ta2O5 changes the morphology of the nanodimples but does not impact dimple ordering. Electron energy loss spectroscopy indicated an electronic band gap of 4.5 eV and a bulk plasmon band with a maximum of 21.5 eV. Gold nanoparticles (Au NPs) were coated on Ta2O5 nanodimple arrays by annealing sputtered Au thin films on Ta nanodimple arrays to simultaneously form Au NPs and convert Ta to Ta2O5. Au NPs produced this way showed a localized surface plasmon resonance maximum at 2.08 eV, red-shifted by ∼0.3 eV from the value in air or on SiO2 substrates. Lumerical simulations suggest a partial embedding of the Au NPs to explain this magnitude of the red shift. The resulting plasmonic heterojunctions exhibited a significantly higher ensemble-averaged local field enhancement than Au NPs on quartz substrates and demonstrated much higher catalytic activity for the plasmon-driven photo-oxidation of p-aminothiophenol to p,p'-dimercaptoazobenzene.