论文信息 - GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique - 字舞流文

GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

J. T. Asubar | H. Tokuda | M. Kuzuhara | Yusui Nakamura | K. Naito | A. Baratov | R. Low | S. Kamiya | I. Nagase | S. Urano | S. Kawabata | Tomohiro Motoyama | Zenji Yatabe | J. Asubar