Optical receivers
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[1] W. Schottky. Über spontane Stromschwankungen in verschiedenen Elektrizitätsleitern , 1918 .
[2] H. Nyquist. Thermal Agitation of Electric Charge in Conductors , 1928 .
[3] J. Johnson. Thermal Agitation of Electricity in Conductors , 1928 .
[4] D. O. North,et al. An Analysis of the factors which determine signal/noise discrimination in pulsed-carrier systems , 1963 .
[5] G. A. Baraff,et al. Maximum Anisotropy Approximation for Calculating Electron Distributions; Application to High Field Transport in Semiconductors , 1964 .
[6] G. Bedard,et al. Photon Counting Statistics of Gaussian Light , 1966 .
[7] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[8] R. A. Moore,et al. Properties of alternately charged coplanar parallel strips by conformal mappings , 1968 .
[9] W. Pratt. Laser Communication Systems. , 1969 .
[10] R. K. Chang,et al. Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon , 1970 .
[11] Malvin C. Teich,et al. Photoelectron-Counting Distributions for Irradiance-Modulated Radiation* , 1970 .
[12] S. M. Sze,et al. Current transport in metal-semiconductor-metal (MSM) structures , 1971 .
[13] R. D. Kasser,et al. Noise factor contours for field-effect transistors at moderately high frequencies , 1972 .
[14] R. Mcintyre. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory , 1972 .
[15] J. Conradi,et al. The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental , 1972 .
[16] C. R. Crowell,et al. Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors , 1972 .
[17] S. Personick. Receiver design for digital fiber optic communication systems, II , 1973 .
[18] Yoshihiko Mizushima,et al. Schottky barrier height of n‐InxGa1−xAs diodes , 1973 .
[19] C. R. Crowell,et al. Ionization coefficients in semiconductors: A nonlocalized property , 1974 .
[20] J. E. Goell,et al. Input amplifiers for optical PCM receivers , 1974 .
[21] J. E. Goell. An optical repeater with high-impedance input amplifier , 1974 .
[22] J. Hullett,et al. Receiver Design for Multilevel Digital Optical Fiber Systems , 1975, IEEE Trans. Commun..
[23] P. Balaban,et al. Statistical evaluation of the error rate of the fiberguide repeater using importance sampling , 1976, The Bell System Technical Journal.
[24] P. Runge,et al. An Experimental 50 Mb/s Fiber Optic PCM Repeater , 1976, IEEE Trans. Commun..
[25] J. Hullett,et al. A Feedback Receive Amplifier for Optical Transmission Systems , 1976, IEEE Trans. Commun..
[26] S. Personick,et al. A Detailed Comparison of Four Approaches to the Calculation of the Sensitivity of Optical Fiber System Receivers , 1977, IEEE Trans. Commun..
[27] S.D. Personick. Receiver design for optical fiber systems , 1977, Proceedings of the IEEE.
[28] G. E. Stillman,et al. Chapter 5 Avalanche Photodiodes , 1977 .
[29] Theodore I. Kamins,et al. Device Electronics for Integrated Circuits , 1977 .
[30] R. J. Keyes. Optical and Infrared Detectors , 1977 .
[31] D. Smith,et al. A simplified approach to digital optical receiver design , 1978 .
[32] C. A. Brackett,et al. Atlanta fiber system experiment: Optical detector package , 1978, The Bell System Technical Journal.
[33] R. Berry,et al. Optical Fiber System Trials at 8 Mbits/s and 140 Mbits/s , 1978, IEEE Trans. Commun..
[34] R. C. Hooper,et al. Digital optical receiver design for non-zero extinction ratio using a simplified approach , 1978 .
[35] D. H. Wolaver,et al. Atlanta fiber system experiment: Practical 45-mb/s regenerator for lightwave transmission , 1978, The Bell System Technical Journal.
[36] Koichi Asatani,et al. High-speed optical pulse transmission at 1.29-µm wavelength using low-loss single-mode fibers , 1978 .
[37] I. Garrett,et al. Receivers for optical communications: A comparison of avalanche photodiodes with PIN-FET hybrids , 1978 .
[38] J. Hullett,et al. Receiver Design for Optical PPM Systems , 1978, IEEE Trans. Commun..
[39] Stewart D. Personick. Chapter 19 – Receiver Design , 1979 .
[40] Low-noise optical detection of a 1.1 Gb/s optical data stream , 1979 .
[41] K. Ogawa,et al. GaAs f.e.t. transimpedance front-end design for a wideband optical receiver , 1979 .
[42] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[43] K. Ogawa,et al. Small area ingaas/inp p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 mb/s and 45 mb/s lightwave receivers at 1.31 μm wavelength , 1980 .
[44] D. Wake,et al. p-i-nf.e.t. hybrid optical receiver for 1.1-1.6 μm optical communication systems , 1980 .
[45] David R. Smith,et al. p-i-n/f.e.t. hybrid optical receiver for longer-wavelength optical communication systems , 1980 .
[46] S. D. Personick,et al. Receiver design for optical fiber communication systems , 1980 .
[47] C. A. Burrus,et al. High-speed digital lightwave communication using LEDs and PIN photodiodes at 1.3 μm , 1980, The Bell System Technical Journal.
[48] K. Ogawa. Noise caused by GaAs mesfets in optical receivers , 1981, The Bell System Technical Journal.
[49] S. R. Forrest,et al. Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes , 1981 .
[50] H. J. Boll,et al. A long-wavelength optical receiver using a short-channel Si-MOSFET , 1981, The Bell System Technical Journal.
[51] I. Garrett. Receivers for optical fibre communications , 1981 .
[52] G. E. Stillman,et al. Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields , 1982 .
[53] J. Yamada,et al. Gigabit/s optical receiver sensitivity and zero-dispersion single-mode fiber transmission at 1.55 µm , 1982 .
[54] E. Snitzer. Optical fiber telecommunications , 1982, IEEE Journal of Quantum Electronics.
[55] J. Yamada,et al. Characteristics of Gbit/s optical receiver sensitivity and long-span single-mode fiber transmission at 1.3 µm , 1982 .
[56] B. Owen. PIN-GaAs FET optical receiver with a wide dynamic range , 1982 .
[57] G. Williams. Wide-dynamic-range fiber optic receivers , 1982, 1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
[58] G. Arnold,et al. Semiconductor devices for optical communication , 1982 .
[59] P. P. Smyth,et al. Experimental comparison of a germanium avalanche photodiode and InGaAs PINFET receiver for longer wavelength optical communication systems , 1982 .
[60] S. R. Forrest,et al. Sensitivity of avalanche photodetector receivers for long-wavelength optical communications , 1982, The Bell System Technical Journal.
[61] Small-active-area germanium avalanche photodiode for single-mode fibre at 1.3 μm wavelength , 1983 .
[62] Tran Muoi. Receiver Design for Digital Fiber Optic Transmission Systems Using Manchester (Biphase) Coding , 1983, IEEE Trans. Commun..
[63] Injection-locked 1.5 μm InGaAsP/InP lasers capable of 450 Mbit/s transmission over 106 km , 1983 .
[64] Kinichiro Ogawa,et al. Considerations for Optical Receiver Design , 1983, IEEE J. Sel. Areas Commun..
[65] B. Kasper,et al. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions , 1983 .
[66] Richard A. Linke,et al. 130 KM TRANSMISSION EXPERIMENT AT 2 GB/S USING SILICA-CORE FIBER AND A VAPOR PHASE TRANSPORTED DFB LASER. , 1984 .
[67] A High Reliability High Sensitivity Lightwave Receiver for the SL Undersea Lightwave System , 1984, IEEE Journal on Selected Areas in Communications.
[68] High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure , 1984 .
[69] David G. Ross,et al. A highly integrated regenerator for 295.6 Mbit/s undersea optical transmission , 1984, Journal of Lightwave Technology.
[70] T. Torikai,et al. High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE , 1984 .
[71] T. Muoi. Receiver design for high-speed optical-fiber systems , 1984 .
[72] A. A. Abidi. Gigahertz transresistance amplifiers in fine line NMOS , 1984 .
[74] P. P. Smyth,et al. PINFET hybrid optical receivers for 1.2 Gbit/s transmission systems operating at 1.3 and 1.55 μm wavelength , 1984 .
[75] H. Toba,et al. Injection-locking technique applied to a 170 km transmission experiment at 445•8 Mbit/s , 1984 .
[76] M. Aiki,et al. 446 Mbit/s integrated optical repeater , 1985, Journal of Lightwave Technology.
[77] Richard A. Linke,et al. 4 Gb/s Transmission over 103 km of Optical Fiber Using a Novel Electronic Multiplexer/Demultiplexer , 1985 .
[78] Joe C. Campbell,et al. SAGM avalanche photodiode optical receiver for 2 Gbit/s and 4 Gbit/s , 1985 .
[79] C. Y. Chen,et al. 2‐Gb/s sensitivity of a Ga0.47In0.53As photoconductive detector/GaAs field‐effect transistor hybrid photoreceiver , 1985 .
[80] Govind P. Agrawal,et al. Power penalty due to decision-time jitter in optical communication systems , 1986 .
[81] Kenya Nakai,et al. Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate , 1986 .
[82] T. M. Shen. Power penalty due to decision-time jitter in receivers using avalanche photodiodes , 1986 .
[83] Gadi Eisenstein,et al. Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode , 1986 .
[84] A. L. Kellner,et al. Composition dependence of Au/InxAl1−xAs Schottky barrier heights , 1986 .
[85] J. J. O'Reilly,et al. Power penalty due to jitter on optical communication systems , 1987 .
[86] B. Wedding,et al. 5 Gbit/s transmission system experiment over 111 km of optical fibre , 1987 .
[87] Sadao Fujita,et al. Long-distance gigabit-range optical fiber transmission experiments employing DFB-LD's and InGaAs-APD's , 1987 .
[88] W. Powazinik,et al. Measurement of hole velocity in n-type InGaAs , 1987 .
[89] John E. Bowers,et al. An APD/FET optical receiver operating at 8 Gbit/s , 1987 .
[90] Joe C. Campbell,et al. Multigigabit-per-second avalanche photodiode lightwave receivers , 1987 .
[91] Osamu Wada,et al. GaInAs pin photodiode/GaAs preamplifier photoreceiver for gigabit-rate communications systems using flip-chip bonding techniques , 1988 .
[92] J.M. Woodall,et al. High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates , 1988, IEEE Electron Device Letters.
[93] J. Shibata,et al. A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply , 1988 .
[94] P. Vettiger,et al. 105-GHz bandwidth metal-semiconductor-metal photodiode , 1988, IEEE Electron Device Letters.
[95] N. Kuwata,et al. Monolithic pin-HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communications , 1988 .
[96] Sadao Fujita,et al. 10 Gbit/s, 100 km optical fibre transmission experiment using high-speed MQW DFB-LD and back-illuminated GaInAs APD , 1989 .
[97] N. Olsson. Lightwave systems with optical amplifiers , 1989 .
[98] J. Gimlett,et al. High-performance monolithic dual-MSM photodetector for long-wavelength coherent receivers , 1989 .
[99] M. Sasaki,et al. OEIC technology and its application to subscriber loops , 1989 .
[100] Hideki Hayashi,et al. Low-noise current optoelectronic integrated receiver with internal equalizer for gigabit-per-second long-wavelength optical communications , 1990 .
[101] Sethumadhavan Chandrasekhar,et al. 4 Gbit/s pin/HBT monolithic photoreceiver , 1990 .
[102] L. E. Tarof. Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz , 1991 .
[103] D. Rogers. Integrated optical receivers using MSM detectors , 1991 .
[104] J. Chyi,et al. Resonant cavity-enhanced (RCE) photodetectors , 1991 .
[105] W.-P. Hong,et al. Monolithically integrated waveguide-MSM detector-HEMT amplifier receiver for long-waveguide lightwave systems , 1991, IEEE Photonics Technology Letters.
[106] High sensitivity 10 Gbit/s optical receiver using two cascaded EDFA preamplifiers , 1991 .
[107] R. Boudreau,et al. High gain (21 dB) packaged semiconductor optical amplifiers , 1991, 1991 Proceedings 41st Electronic Components & Technology Conference.
[108] L. Pophillat,et al. 180 photons/bit in 140 Mbit/s, 305 km direct-detection optical transmission experiment , 1991 .
[109] J. Soole,et al. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications , 1991 .
[110] Kenji Kawano,et al. A high-efficiency 50 GHz InGaAs multimode waveguide photodetector , 1992 .
[111] H. Hayashi,et al. An ultra-high-speed optoelectronic integrated receiver for fiber-optic communications , 1992 .
[112] E. H. Bottcher,et al. Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors , 1992 .
[113] Atilio Gameiro,et al. 10 Gbit/s timing recovery circuit using dielectric resonator and active bandpass filters , 1992 .
[114] Yuichi Kawamura,et al. InGaAsP-InA1As Superlattice Avalanche Photodiode , 1992 .
[115] H. Griem,et al. High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W , 1992, IEEE Photonics Technology Letters.
[116] M. Kawachi,et al. Polarization sensitivity of a silica waveguide thermooptic phase shifter for planar lightwave circuits , 1992, IEEE Photonics Technology Letters.
[117] P.E. Barnsley,et al. A 4*5 Gb/s transmission system with all-optical clock recovery , 1992, IEEE Photonics Technology Letters.
[118] U. Langmann,et al. A Si bipolar phase and frequency detector IC for clock extraction up to 8 Gb/s , 1992 .
[119] A.H. Gnauck,et al. A transimpedance APD optical receiver operating at 10 Gb/s , 1992, IEEE Photonics Technology Letters.
[120] Y. Akatsu,et al. A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver , 1993, IEEE Photonics Technology Letters.
[121] S. Sugou,et al. High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product , 1993, IEEE Photonics Technology Letters.
[122] R. Sabella,et al. Analysis of InGaAs p-i-n photodiode frequency response , 1993 .
[123] T. Baird,et al. High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes , 1993, IEEE Photonics Technology Letters.
[124] J. E. Sitch,et al. Hybrid optical receivers with integrated electronics , 1993 .
[125] S. Chandrasekhar,et al. High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure , 1993, IEEE Photonics Technology Letters.
[126] B. L. Patel,et al. 12 GHz PIN-HEMT optical receiver front end , 1993 .
[127] Emmerich Bertagnolli,et al. Silicon bipolar technology and circuits for optical communications at data rates above 10 GBit/s , 1993 .
[128] U. Koren,et al. High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors , 1994, IEEE Photonics Technology Letters.
[129] Eiichi Sano,et al. A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process , 1994 .
[130] Y. Imai,et al. Compact 10 Gbit/s optical transmitter and receiver circuit packs , 1994 .
[131] T. Nagatsuma,et al. 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength , 1994, IEEE Photonics Technology Letters.
[132] D. G. Knight,et al. Noise performance of separate absorption, grading, charge and multiplication InP/InGaAs avalanche photodiodes , 1994, IEEE Photonics Technology Letters.
[133] G. Haddad,et al. 7.1 GHz bandwidth monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As PIN-HBT transimpedance photoreceiver , 1994, IEEE Photonics Technology Letters.
[134] L. Eastman,et al. Optimization of high-speed metal-semiconductor-metal photodetectors , 1994, IEEE Photonics Technology Letters.
[135] S. W. Granlund,et al. Optical Preamplifier Receivers: Application to Long-Haul Digital Transmission , 1994 .
[136] Flip-chip lnAlAs/lnGaAs superlattice avalanche photodiodes with back-illuminated structures , 1994 .
[137] T. Minami,et al. Packaging technology for a 10-Gb/s photoreceiver module , 1994 .
[138] Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product , 1994 .
[139] B. L. Patel,et al. Practical implementation of high performance optical transmitter/receiver subsystems for 20 Gbit/s TDM operation , 1994 .
[140] G. Y. Robinson,et al. 110-GHz GaInAs/InP double heterostructure p-i-n photodetectors , 1995 .
[141] Lester F. Eastman,et al. High-frequency, high-efficiency MSM photodetectors , 1995 .
[142] Aaron Buchwald,et al. Integrated Fiber-Optic Receivers , 1995 .
[143] Patrick Fay,et al. 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 mu m wavelength , 1995 .
[144] J. Muszalski,et al. Resonant cavity enhanced photonic devices , 1995 .
[145] J. Chyi,et al. High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts , 1995 .
[146] J.E. Bowers,et al. Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product , 1995, IEEE Photonics Technology Letters.
[147] Chi-Kuang Sun,et al. 120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide , 1995, IEEE Photonics Technology Letters.
[148] H. Kamitsuna,et al. Ultra-wideband monolithic photoreceivers using HBT-compatible HPTs with novel base circuits, and simultaneously integrated with an HBT amplifier , 1995 .
[149] S. Chandrasekhar,et al. 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications , 1995, IEEE Photonics Technology Letters.
[150] M. Deen,et al. Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes , 1995 .
[151] L. Mandel,et al. Optical Coherence and Quantum Optics , 1995 .
[152] Sherman Karp,et al. Optical Communications , 1976 .