Modeling of carbon nanotube field-effect transistor with nanowelding treatment

An efficient and universal numerical model of carbon nanotube (CN) field-effect transistor (FET) with nanowelding treatment has been developed. In this model, an analytic expression of carrier distribution of intrinsic CN is incorporated into the modified Poisson equation where a parameter @h is adopted to account for the effect of ultrasonic nanowelding on the CN/metal contact. The electrostatic potential of CN is derived by Newton-Raphson iteration which makes the model efficient for the CNFET simulation. The current-voltage characteristics are calculated using the Landauer formalism. The device performance is investigated in detail by scaling power supply voltage, insulator thickness and CN diameter.

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