High-field generation of electron traps and charge trapping in ultra-thin SiO2

It will be shown in this paper that as a consequence of high-field stress on thin SiO2films (70-200Å), two types of charges are introduced into the oxide. Their spatial distribution and formation mechanisms are first investigated. Then the phenomenon of electron trap generation owing to high-field stress is discussed. Experimental techniques and special precautions for seperating the effects of the two types of charges will also be described. The effect of these charges on a floating gate E2PROM cell has been described elsewhere(1)and will not be repeated.

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