Temperature Dependence of the Resistivity for Metal-Oxide Semiconductors Based on Tin Dioxide

Polycrystalline films of SnO2 and films in the SnO2–In2O3 and SnO2–ZnO systems, which are of interest for use in gas-sensitive sensors, are grown from metal chlorides on a 22-XC ceramic substrate by the hydropyrolytic method. The dependences of the resistivity for metal oxide films based on tin dioxide are measured in the temperature range 200–400°C. The distribution of phases in the samples prepared is examined using electron probe X-ray microanalysis. It is shown that the specific features in the temperature dependences of the resistivity for the semiconducting metal-oxide films grown can be associated with their microstructure and the environmental condition. The temperature dependences of the resistivity for all the metal-oxide films studied exhibit a semiconductive behavior.