Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Mobility and low-frequency (LF) noise were studied in tensile strained Si n- and pMOSFETs fabricated on relaxed SiGe virtual substrates. Both the impact of the channel orientation ((110) or (100) o ...

[1]  R. Loo,et al.  Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs , 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

[2]  B. Tavel,et al.  Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization? , 2005 .

[3]  E. Kasper,et al.  Strain adjustment with thin virtual substrates , 2004 .

[4]  L.K.J. Vandamme,et al.  Annealing of ion‐implanted resistors reduces the 1/ f noise , 1986 .

[5]  E. Simoen,et al.  Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates , 2006, IEEE Transactions on Electron Devices.

[6]  Eddy Simoen,et al.  Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes , 2004 .

[7]  P. Solomon,et al.  Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness , 2003 .

[8]  K. Kotani,et al.  1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process , 2006, IEEE Transactions on Electron Devices.

[9]  Mikael Östling,et al.  1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs , 2003 .

[10]  T. Noguchi,et al.  Mobility improvement for 45nm node by combination of optimized stress and channel orientation design , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[11]  Gérard Ghibaudo,et al.  Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..

[12]  A. O'Neill,et al.  Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors , 2005 .

[13]  C.W. Liu,et al.  Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs , 2004, IEEE Electron Device Letters.

[14]  M. von Haartman,et al.  Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate , 2006, IEEE Transactions on Electron Devices.

[15]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[16]  S. Laux,et al.  Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .

[17]  R. Chau,et al.  A 90-nm logic technology featuring strained-silicon , 2004, IEEE Transactions on Electron Devices.

[18]  C.W. Liu,et al.  Threading dislocation induced low frequency noise in strained-Si nMOSFETs , 2005, IEEE Electron Device Letters.

[19]  G. Ghibaudo,et al.  Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs , 2006, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

[20]  S. Chang,et al.  Low-Frequency Noise Characteristics in Strained-Si nMOSFETs , 2007, IEEE Electron Device Letters.

[21]  M. Ieong,et al.  Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs , 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

[22]  Strained-Si NMOSFETs on thin 200 nm virtual substrates , 2005, 2005 International Semiconductor Device Research Symposium.

[23]  A. Chou,et al.  High performance CMOS fabricated on hybrid substrate with different crystal orientations , 2003, IEEE International Electron Devices Meeting 2003.

[24]  Vladimir M. Aroutiounian,et al.  Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise , 2006 .

[25]  John H. Scofield,et al.  Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors , 1994 .

[26]  Toshimitsu Musha,et al.  Dynamics of energy partition among coupled harmonic oscillators in equilibrium , 2005 .

[27]  H. Nayfeh,et al.  Strained silicon MOSFET technology , 2002, Digest. International Electron Devices Meeting,.