Chemical Vapor Deposition of Boron Nitride

Thermodynamics an kinetics of boron nitride deposition from BCl 3 -NH 3 gas mixtures were studied in the temperature range 850 to 1050 o C at pressures between 1.1 and 3.5 Torr. A wide range of deposition rates, as high as 1 μm/min, were measured. The rate of depositon was controlled by an interface reaction with an activation energy of 35±3 kcal/mol. The deposition rate constant essentially was independent of the partial pressure of NH 3 and showed a close to first-order dependence on the partial pressure of BCl 2