论文信息 - Ag ∕ Au Diffusion Wafer Bonding for Thin- GaN LED Fabrication

Ag ∕ Au Diffusion Wafer Bonding for Thin- GaN LED Fabrication

In this study we successfully demonstrate a method for Ag/Au diffusion wafer bonding. We were able to achieve a high-melting-point bonding interface at a relatively low bonding temperature of 150°C. The Ag/Au interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the Ag matrix layer, which causes the Ag/Au interface to move toward the Au side over time. The use of this method of Ag/Au diffusion bonding makes the fabrication of high-power thin-GaN light-emitting diode chips on Si wafers a feasible possibility.

Y. C. Chuang | C. Y. Liu | C. L. Chang | C. L. Chang | Y. Chuang

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