High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology
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C. Merckling | M. Caymax | M. Heyns | T. Hoffmann | K. De Meyer | B. de Jaeger | M. Meuris | M. Houssa | L. Nyns | E. Vrancken | F. Bellenger | J. Penaud
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