High-power AlGaInN flip-chip light-emitting diodes
暂无分享,去创建一个
Michael R. Krames | S. A. Stockman | Paul S. Martin | Nathan F. Gardner | Jonathan J. Wierer | J. O'Shea | D. Steigerwald | M. Ludowise | M. Krames | W. Götz | R. S. Kern | N. Gardner | Y. Shen | W. Götz | Y. C. Shen | M. J. Ludowise | J. O'shea | G. Christenson | Christopher H. Lowery | S. Subramanya | Daniel A. Steigerwald | S. Subramanya | Gina L Christenson | Y. Shen | Y. Shen | S. Stockman | C. Lowery | R. Kern
[1] E. Fred Schubert,et al. Light-emitting Diodes: Research, Manufacturing, and Applications VI , 2002 .
[2] C. P. Kuo,et al. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes , 1994 .
[3] T. S. Tan,et al. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency , 1999 .
[4] N. Holonyak,et al. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .
[5] S. Nakamura,et al. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures , 1998 .
[6] K. Lynn,et al. Detection of hydrogen‐plasma‐induced defects in Si by positron annihilation , 1994 .
[7] F. A. Kish,et al. High-flux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes , 1998 .