Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

We quantify the rates and total amounts of the arsenic for antimony exchange on both the Sb-terminated and Ga (or In)-terminated GaSb (001) surfaces using in situ real time line-of-sight mass spectrometry (LOS-MS) during molecular beam epitaxy. On the Sb-terminated GaSb (001) surface, an As for Sb exchange is observed to occur at all values of incident As2 flux considered. At high substrate temperature, three-dimensional (3D) nanometer-sized clusters from as a consequence of As/Sb exchange and lattice mismatch strain between GaAs and GaSb. The 3D clusters are found to have lateral dimensions of ∼10–30 nm and heights of 1–3 nm by atomic force microscopy (AFM). By contrast, at lower substrate temperatures a two-dimensional surface morphology is maintained, and AFM reveals an array of atomically flat terraces. On the surface terminated by one monolayer (ML) of Ga or In, there exists a critical As2 flux below which the As/Sb exchange is greatly diminished. The net amounts of Sb leaving the surface during one ...

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