Improved sensing scheme for FeRAM

A new sensing scheme is proposed to improve the speed of the FeRAM circuit. In this improved sensing scheme, the technology of overdriving the sense amplifier is used. For a 2T/2C FeRAM circuit with 512 cells per bitline structure, the simulations of HSPICE show that by using the new sensing scheme the sensing speed is improved 12% at 5 V supply and the new sensing scheme is more suitable for lower voltage supply applications.

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