PROTON EFFECTS AND TEST ISSUES FOR SATELLITE DESIGNERS: DISPLA CEMENT EFFECTS

IV. Proton Effects and Test Issues for Satellite DesignersPart B: Displacement EffectsCheryl J. MarshallNASA/Goddard Space Flight CenterElectrical Systems Center / Code 562Greenbelt, Maryland 20771Paul W. MarshallConsultant7655 Hat Creek RoadBrookneal, VA 245281.0 Introduction 512.0 Proton Induced Displacement Damage Mechanisms and Tools 522.1 Displacement Damage Mechanisms and Defect Formation 532.2 Displacement Damage Effects in Materials and Devices 562.3 Non-lonizing Energy Loss Rate (NIEL) Concept 592.3.12.3.22.3.32.3.42.4The Correlation of NIEL to Device Behavior 61Limitations in the Use of NIEL 64Calculation of Displacement Damage Equivalent Fiuences ....... 68Concept of"Displacement Damage Dose". 69On-Orbit Performance Predictions 703.0 Proton Displacement Damage Case Studies 743.1 Introduction 743.2 Laboratory Radiation Test Issues 743.3 Case Studies 773.3.13.3.23.3.33.3.43.3.53.3.6Bipolar Transistors 77Charge Transfer Devices 79Photodetectors 87Lasers and Light Emitting Diodes 90Optocouplers 92Solar Cells 964.0 Summary 995.0 Acknowledgments 1006.0 References 100IV-50

[1]  Mark Stanford Robbins Radiation damage effects in charge coupled devices , 1992 .

[2]  D. C. Marvin,et al.  Evaluation of multijunction solar cell performance in radiation environments , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).

[3]  J. R. Carter,et al.  Solar cell radiation handbook , 1989 .

[4]  J. R. Carter Effect of electron energy on defect introduction in silicon , 1966 .

[5]  Charles E. Barnes,et al.  Total dose and proton damage in optocouplers , 1996 .

[6]  E. A. Wolicki,et al.  High energy electron induced displacement damage in silicon , 1988 .

[7]  Allan H. Johnston,et al.  Degradation of precision reference devices in space environments , 1997 .

[8]  Akio Yamamoto,et al.  Radiation damage in InP single crystals and solar cells , 1984 .

[9]  G. R. Hopkinson,et al.  Further measurements of random telegraph signals in proton irradiated CCDs , 1995 .

[10]  C. J. Keavney,et al.  Optimizing the radiation resistance of InP solar cells: Effect of dopant density and cell thickness , 1993 .

[11]  J. R. Srour,et al.  Damage mechanisms in radiation-tolerant amorphous silicon solar cells , 1998 .

[12]  Jacobus Hendricus van Lint,et al.  Mechanisms of Radiation Effects in Electronic Materials (Volume 1) , 1980 .

[13]  David Scheiman,et al.  Improved performance of p/n InP solar cells , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[14]  P. Marshall,et al.  Proton effects in charge-coupled devices , 1996 .

[15]  Cheryl J. Dale,et al.  Displacement damage in Si imagers for space applications , 1991, Medical Imaging.

[16]  B. Johlander,et al.  Techniques for minimizing space proton damage in scientific charge coupled devices , 1991 .

[17]  A. H. Johnston,et al.  Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation , 1998 .

[18]  James R. Janesick,et al.  Sandbox CCDs , 1995, Electronic Imaging.

[19]  Cheryl J. Dale,et al.  Proton, neutron and electron-induced displacement damage in germanium , 1989 .

[20]  Kenneth A. LaBel,et al.  SEDS MIL-STD-1773 fiber optic data bus: Proton irradiation test results and spaceflight SEU data , 1993 .

[21]  Kenneth F. Galloway,et al.  200 MeV proton damage effects on multi-quantum well laser diodes , 1997 .

[22]  Marty R. Shaneyfelt,et al.  Proton irradiation effects on advanced digital and microwave III-V components , 1994 .

[23]  Stephen M Seltzer,et al.  SHIELDOSE :: A computer code for space-shielding radiation dose calculations , 1980 .

[24]  D. Schroder,et al.  The concept of generation and recombination lifetimes in semiconductors , 1982, IEEE Transactions on Electron Devices.

[25]  B. Burke,et al.  Dynamic suppression of interface-state dark current in buried-channel CCDs , 1991 .

[26]  A. L. Barry,et al.  The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons , 1995 .

[27]  S. Dannefaer Defects in semiconductors , 1989 .

[28]  R. A. Hartmann,et al.  Permanent Damage Produced by Single Proton Interactions in Silicon Devices , 1986, IEEE Transactions on Nuclear Science.

[29]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[30]  J. Narayan,et al.  Defect Annealing Studies in Neutron Transmutation Doped Silicon , 1979 .

[31]  A. Van Ginneken,et al.  Fermi National Accelerator Laboratory FN-522 Non Ionizing Energy Deposition in Silicon for Radiation Damage Studies , 1998 .

[32]  J. E. Gover,et al.  Radiation effects on microelectronics , 1987 .

[33]  M. F. Tompsett,et al.  II-3 the effects of bulk traps on the performance of bulk channel charge-coupled devices , 1974 .

[34]  Cheryl J. Dale,et al.  Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device , 1990 .

[35]  Peter J. McNulty,et al.  Proton-Induced Nuclear Reactions in Silicon , 1981, IEEE Transactions on Nuclear Science.

[36]  John D. Cressler,et al.  Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors , 1998 .

[37]  J. W. Walker,et al.  Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon , 1973 .

[38]  P. J. McNulty,et al.  Proton induced spallation reactions , 1994 .

[39]  L. R. Dawson,et al.  Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes , 1982, IEEE Transactions on Nuclear Science.

[40]  G. R. Hopkinson,et al.  Proton damage effects in an EEV CCD imager , 1989 .

[41]  G. D. Watkins,et al.  Radiation effects in semiconductors , 1971 .

[42]  Alexandra Holland Annealing of proton-induced displacement damage in CCDs for space use. , 1991 .

[43]  J.P. Spratt,et al.  The effects of nuclear radiation on P-channel CCD imagers , 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

[44]  Robert J. Walters,et al.  Carrier removal in p-type InP , 1998 .

[45]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[46]  G. Hopkinson,et al.  Proton-induced charge transfer degradation in CCDs for near-room temperature applications , 1994 .

[47]  F. Eisen,et al.  Ion irradiation damage in n‐type GaAs in comparison with its electron irradiation damage , 1992 .

[48]  Sumio Matsuda,et al.  High-energy and high-fluence proton irradiation effects in silicon solar cells , 1996 .

[49]  Robert S Averback,et al.  Ion-irradiation studies of the damage function of copper and silver , 1978 .

[50]  G. R. Hopkinson,et al.  Cobalt60 and proton radiation effects on large format, 2-D, CCD arrays for an Earth imaging application , 1992 .

[51]  H. Amekura,et al.  Radiation-induced two-step degradation of Si photoconductors and space solar cells , 1997 .

[52]  C. E. Barnes,et al.  The Effect of Gamma Irradiation on Optical Isolators , 1975, IEEE Transactions on Nuclear Science.

[53]  Masafumi Yamaguchi,et al.  Mechanism for radiation resistance of InP solar cells , 1988 .

[54]  Robert J. Walters,et al.  A new approach to damage prediction for solar cells exposed to different radiations , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

[55]  R. Wojcik,et al.  An improved displacement damage monitor LED , 1990 .

[56]  Edmund K. Banghart,et al.  A model for charge transfer in buried-channel charge-coupled devices at low temperature , 1991 .

[57]  Cheryl J. Dale,et al.  Spacecraft displacement damage dose calculations for shielded CCDs , 1992, Electronic Imaging.

[58]  J. Abshire,et al.  Measurement of proton radiation damage to Si avalanche photodiodes , 1997 .

[59]  D. K. Nichols,et al.  A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons , 1982, IEEE Transactions on Nuclear Science.

[60]  Cheryl J. Dale,et al.  Displacement damage in GaAs structures , 1988 .

[61]  Robert J. Walters,et al.  Spectral response of InP/Si solar cells irradiated to high proton fluences , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[62]  Richard A. F. Grieve,et al.  CARTER , 1945 .

[63]  Maximo S. Lazo,et al.  Neutron Damage Equivalence for Silicon, Silicon Dioxide, and Gallium Arsenide , 1987, IEEE Transactions on Nuclear Science.

[64]  Robert J. Walters,et al.  Proton displacement damage and ionizing dose for shielded devices in space , 1997 .

[65]  Andrew Holmes-Siedle,et al.  Handbook of Radiation Effects , 1993 .

[66]  M. Dai,et al.  Time resolved annealing studies of single neutron irradiated avalanche photodiodes , 1996 .

[67]  J. R. Srour Short-Term Annealing in Electron-Irradiated p-Type Silicon , 1970 .

[68]  A. L. Barry,et al.  Proton induced damage in SiC light emitting diodes , 1998 .

[69]  Lionel C. Kimerling,et al.  Observation of recombination-enhanced defect reactions in semiconductors , 1974 .

[70]  M. D'Ordine Proton displacement damage in optocouplers , 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

[71]  R. M. More,et al.  Primary recoil spectra and subcascade effects in ion bombardment experiments , 1982 .

[72]  G. D. Watkins,et al.  Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center , 1964 .

[73]  Maximo S. Lazo,et al.  Neutron damage equivalence in GaAs , 1991 .

[74]  C. I. Lee,et al.  Proton damage effects in linear integrated circuits , 1998 .

[75]  C. J. Keavney,et al.  Space radiation effects in InP solar cells , 1991 .

[76]  Cheryl J. Dale,et al.  Displacement damage equivalent to dose in silicon devices , 1989 .

[77]  S. Clark,et al.  Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology , 1997 .

[78]  C. E. Barnes,et al.  Proton Damage In Laser Diodes And Light-Emitting Diodes (LEDs) , 1982, Photonics West - Lasers and Applications in Science and Engineering.

[79]  G. C. Messenger,et al.  The effects of radiation on electronic systems , 1986 .

[80]  Joseph Carbone,et al.  New low-noise, random access, radiation-resistant and large-format charge-injection device (CID) imagers , 1993, Electronic Imaging.

[81]  J. R. Srour,et al.  Enhanced displacement damage effectiveness in irradiated silicon devices , 1989 .

[82]  E. G. Stassinopoulos,et al.  The space radiation environment for electronics , 1988, Proc. IEEE.

[83]  R. Korde,et al.  The effect of neutron irradiation on silicon photodiodes , 1989 .

[84]  C. E. Barnes The Effects Of Radiation On Optoelectronic Devices , 1987, Other Conferences.

[85]  Daniel M. Fleetwood,et al.  Qualifying commercial ICs for space total-dose environments , 1992 .

[86]  G. P. Mueller,et al.  The Structure of Displacement Cascades in Silicon , 1982, IEEE Transactions on Nuclear Science.

[87]  J. P. Raymond,et al.  Comparison of Neutron, Proton and Gamma Ray Effects in Semiconductor Devices , 1987, IEEE Transactions on Nuclear Science.

[88]  Kenneth F. Galloway,et al.  Annealing effects on multi-quantum well laser diodes after proton irradiation , 1998 .

[89]  A. H. Johnston,et al.  Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programs , 1998 .

[90]  Cheryl J. Dale,et al.  Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus , 1992 .

[91]  R. A. Hartmann,et al.  Radiation Damage Coefficients for Silicon Depletion Regions , 1979, IEEE Transactions on Nuclear Science.

[92]  C. E. Barnes EFFECTS OF $sup 60$Co GAMMA IRRADIATION ON EPITAXIAL GaAs LASER DIODES. , 1970 .

[93]  S. Clark,et al.  An investigation of the spatial location of proton-induced traps in SiGe HBTs , 1998 .

[94]  Edward A. Burke,et al.  Energy Dependence of Proton-Induced Displacement Damage in Silicon , 1986, IEEE Transactions on Nuclear Science.

[95]  P. W. Marshall,et al.  Displacement damage effects in mixed particle environments for shielded spacecraft CCDs , 1993 .

[96]  C. J. Baddiley,et al.  Total dose and proton testing of a commercial HgCdTe array , 1994 .

[97]  Otmar Koehn,et al.  Radiation effects in optoelectronic devices , 1994, Other Conferences.

[98]  G. R. Hopkinson,et al.  Random telegraph signals from proton-irradiated CCDs , 1993 .

[99]  Donald K. Nichols,et al.  A Comparison of Radiation Damage in Linear ICs from COBALT-60 Gamma Rays and 2.2 MeV Electrons , 1983, IEEE Transactions on Nuclear Science.

[100]  A. Johnston,et al.  Models for Total Dose Degradation of Linear Integrated Circuits , 1987, IEEE Transactions on Nuclear Science.

[101]  E. W. Enlow,et al.  Comparison of Proton and Neutron Carrier Removal Rates , 1987, IEEE Transactions on Nuclear Science.

[102]  F. Buchinger,et al.  Identification of individual bistable defects in avalanche photodiodes , 1995 .

[103]  Rose Wimenitz James , 1924, The Psychological Clinic.

[104]  H. Henschel,et al.  Radiation effects in light emitting diodes, laser diodes, photodiodes, and optocouplers , 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

[105]  A. H. Johnston,et al.  Proton damage in linear and digital optocouplers , 1999 .

[106]  B. E. Anspaugh,et al.  Proton and electron damage coefficients for GaAs/Ge solar cells , 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.

[107]  P. H. Wilson,et al.  High energy proton and alpha radiation effects on GaAs/AlGaAs quantum well infrared photodetectors , 1996 .

[108]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[109]  Henry T. Minden Effects of proton bombardment on the properties of GaAs laser diodes , 1976 .

[110]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[111]  Cheryl J. Dale,et al.  A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes , 1994 .

[112]  H. Henschel,et al.  Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD) , 1991 .

[113]  B. C. Passenheim,et al.  Experimental Evaluation Of High Speed Ccd Imager Radiation Effects Using Co60 And Proton Radiation , 1993, 1993 IEEE Radiation Effects Data Workshop.

[114]  Susan Wood,et al.  Simulation of Radiation Damage in Solids , 1981, IEEE Transactions on Nuclear Science.

[115]  R. Wojcik,et al.  Response of GaAs displacement damage monitors to protons, electrons, and gamma radiation , 1989 .

[116]  C. F. Wheatley,et al.  Proton-induced dielectric breakdown of power MOSFETs , 1998 .

[117]  Cheryl J. Dale,et al.  Particle-induced spatial dark current fluctuations in focal plane arrays , 1990 .

[118]  H. L. Heinisch,et al.  Defect production in simulated cascades: Cascade quenching and short-term annealing , 1983 .

[119]  J. Lindhard,et al.  INTEGRAL EQUATIONS GOVERNING RADIATION EFFECTS. (NOTES ON ATOMIC COLLISIONS, III) , 1963 .