Dielectric characteristics of AlN films grown by d.c.-magnetron sputtering discharge

Abstract Aluminium nitride(AlN) films have attracted much interest as a promising opto-electronic material. In this work, AlN films were deposited on p-type silicon by d.c.-magnetron sputtering using different nitrogen concentrations in a mixture with argon and at different substrate temperatures. Structural analysis of the AlN films was performed by X-ray diffraction. The AlN capacitors (MIS structures) were obtained by evaporating aluminium on the back of the silicon wafer, and on circular areas on the film. These capacitors were used to obtain quasi-static current–voltage characteristics at room temperature. The effect of substrate heating on produced AlN films and MIS capacitors is shown. Capacitance–voltage measurements were obtained and indicated that the substrate heating plays an important hole on the MIS capacitor dielectric properties.