Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures

In order to improve the total performance of nonpunch-through (NPT) type trench IGBT for the 1200/spl sim/1700 V region, a triple combination of concepts is adopted: "wide cell pitch" and "carrier stored trench-gate bipolar transistor (CSTBT)" for the emitter side, and "light punch-through (LPT)" structure for the collector side. The wide cell pitch LPT-CSTBT demonstrates lower on-state voltage, lower switching loss, lower junction leakage current than that of conventional NPT trench IGBT, and relatively large short circuit capability. In addition, our device shows excellent gate dielectric reliability by utilizing CVD gate oxide film. The LPT-CSTBT with CVD gate dielectric is a promising candidate for high voltage power devices, because its performance is approaches that of punch-through (PT) trench IGBTs.

[1]  T. Laska,et al.  The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[2]  H. Takahashi,et al.  Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[3]  Shigeru Kusunoki,et al.  Advantages of thick CVD gate oxide for trench MOS gate structures , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[4]  Tetsuo Takahashi,et al.  A design concept for the low forward voltage drop 4500 V trench IGBT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[5]  K. Nakamura,et al.  Evaluation of thick silicon dioxides grown on trench MOS gate structures , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[6]  H. Takahashi,et al.  Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[7]  Ichiro Omura,et al.  A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.

[8]  T. Laska,et al.  1200 V-trench-IGBT study with square short circuit SOA , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).