LOCOS induced stress effects on SOI bipolar devices
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The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of electrical and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted in order to reduce the induced stress.
[1] Dimitri A. Antoniadis,et al. LOCOS-induced stress effects on thin-film SOI devices , 1997 .