Erratum: Basic principles of STT-MRAM cell operation in memory arrays

[1]  J. W. Brown Thermal Fluctuations of a Single-Domain Particle , 1963 .

[2]  M. Julliere Tunneling between ferromagnetic films , 1975 .

[3]  Kinder,et al.  Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.

[4]  Berger Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[5]  J. Slonczewski Current-driven excitation of magnetic multilayers , 1996 .

[6]  Mt Johnson,et al.  Magnetic anisotropy in metallic multilayers , 1996 .

[7]  W. Coffey,et al.  Thermally Activated Relaxation Time of a Single Domain Ferromagnetic Particle Subjected to a Uniform Field at an Oblique Angle to the Easy Axis: Comparison with Experimental Observations , 1998 .

[8]  Wouter Oepts,et al.  Dielectric breakdown of ferromagnetic tunnel junctions , 1998 .

[9]  M. Sharrock,et al.  Measurement and interpretation of magnetic time effects in recording media , 1999 .

[10]  Jonathan Z. Sun Spin-current interaction with a monodomain magnetic body: A model study , 2000 .

[11]  Ralph,et al.  Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars , 1999, Physical review letters.

[12]  T. Schulthess,et al.  Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches , 2001 .

[13]  J. Slonczewski Currents and torques in metallic magnetic multilayers , 2002 .

[14]  R. Dittrich,et al.  Energy barriers in magnetic random access memory elements , 2003, Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401).

[15]  Jon M. Slaughter,et al.  Magnetoresistive random access memory using magnetic tunnel junctions , 2003, Proc. IEEE.

[16]  A. Kent,et al.  Spin-transfer-induced precessional magnetization reversal , 2004 .

[17]  J. Katine,et al.  Time-resolved reversal of spin-transfer switching in a nanomagnet. , 2004, Physical review letters.

[18]  Y. Huai,et al.  Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions , 2004, cond-mat/0504486.

[19]  A. Panchula,et al.  Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers , 2004, Nature materials.

[20]  P. Brown,et al.  Demonstrated reliability of 4-mb MRAM , 2004, IEEE Transactions on Device and Materials Reliability.

[21]  J. Daughton,et al.  70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers , 2004, IEEE Transactions on Magnetics.

[22]  S. Yuasa,et al.  Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions , 2004, Nature materials.

[23]  Johan Åkerman,et al.  Toward a Universal Memory , 2005, Science.

[24]  Liesbet Lagae,et al.  Increased Gilbert damping in spin valves and magnetic tunnel junctions , 2005 .

[25]  P. B. Visscher,et al.  Spin-torque switching: Fokker-Planck rate calculation , 2005 .

[26]  J. Slonczewski Currents, torques, and polarization factors in magnetic tunnel junctions , 2004, cond-mat/0404210.

[27]  Albert Fert,et al.  From giant magnetoresistance to current-induced switching by spin transfer , 2005 .

[28]  K. Tsunekawa,et al.  230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions , 2005, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

[29]  Z. Diao,et al.  Critical current distribution in spin transfer switched magnetic tunneling junctions , 2005, INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..

[30]  Z. Diao,et al.  Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers , 2005, cond-mat/0510204.

[31]  Z. Diao,et al.  Spin transfer switching current reduction in magnetic tunnel junction based dual spin filter structures , 2005 .

[32]  Heiko Wende,et al.  Two-magnon scattering and viscous Gilbert damping in ultrathin ferromagnets , 2006 .

[33]  Philip Louis Trouilloud,et al.  Rapid-turnaround characterization methods for MRAM development , 2006, IBM J. Res. Dev..

[34]  Dmytro Apalkov,et al.  Spin-transfer switching in MgO-based magnetic tunnel junctions , 2006 .

[35]  Nicholas Kioussis,et al.  Anomalous bias dependence of spin torque in magnetic tunnel junctions. , 2006, Physical review letters.

[36]  Albert Fert,et al.  Spin transfer in magnetic tunnel junctions with hot electrons. , 2006, Physical review letters.

[37]  A. Fert,et al.  The emergence of spin electronics in data storage. , 2007, Nature materials.

[38]  S. Yuasa,et al.  Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier , 2007 .

[39]  Z. Diao,et al.  Spin transfer switching in dual MgO magnetic tunnel junctions , 2007 .

[40]  V. Kamberský,et al.  Spin-orbital Gilbert damping in common magnetic metals , 2007 .

[41]  Jonathan Z. Sun,et al.  Theory of voltage-driven current and torque in magnetic tunnel junctions , 2007 .

[42]  Paul Crozat,et al.  Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited) , 2008 .

[43]  H. Ohno,et al.  Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects. , 2008, Physical review letters.

[44]  D. Ralph,et al.  Measurement of the spin-transfer-torque vector in magnetic tunnel junctions , 2007, 0705.4207.

[45]  D. C. Ralph,et al.  Magnetoresistance and spin-transfer torque in magnetic tunnel junctions , 2008 .

[46]  T. Daibou,et al.  Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes , 2008, IEEE Transactions on Magnetics.

[47]  A. Fert Nobel Lecture: Origin, development, and future of spintronics , 2008 .

[48]  H. Ohno,et al.  Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature , 2008 .

[49]  W. Butler,et al.  Tunneling magnetoresistance from a symmetry filtering effect , 2008, Science and technology of advanced materials.

[50]  A. Tulapurkar,et al.  Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. , 2009, Nature nanotechnology.

[51]  Jeffrey R. Childress,et al.  Magnetization relaxation and structure of CoFeGe alloys , 2009 .

[52]  E. Joseph,et al.  A three-terminal spin-torque-driven magnetic switch , 2009 .

[53]  Alex Zunger,et al.  First-principles determination of low-temperature order and ground states of Fe-Ni, Fe-Pd, and Fe-Pt , 2009 .

[54]  B. Diény,et al.  Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions , 2009 .

[55]  T. Miyazaki,et al.  Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states , 2009 .

[56]  Thomas Schrefl,et al.  Validation of the transition state theory with Langevin-dynamics simulations , 2010 .

[57]  Mircea R. Stan,et al.  Advances and Future Prospects of Spin-Transfer Torque Random Access Memory , 2010, IEEE Transactions on Magnetics.

[58]  A. Driskill-Smith,et al.  Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application , 2010, 2010 International Electron Devices Meeting.

[59]  Kyung-Ho Shin,et al.  Perpendicular magnetic tunnel junctions with synthetic ferrimagnetic pinned layer , 2010 .

[60]  G. Fiedler,et al.  Direct calculation of the attempt frequency of magnetic structures using the finite element method , 2010, 1012.5189.

[61]  H. Ohno,et al.  A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. , 2010, Nature materials.

[62]  D. Nikonov,et al.  Strategies and tolerances of spin transfer torque switching , 2010, 1001.4578.

[63]  Hitoshi Kubota,et al.  High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs , 2010 .

[64]  S. Yuasa,et al.  Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions , 2010 .

[65]  S. Mangin,et al.  Spin-transfer pulse switching: From the dynamic to the thermally activated regime , 2010, 1009.5240.

[66]  Yoichi Shiota,et al.  Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. , 2011, Nature materials.

[67]  Wei-gang Wang,et al.  Electric-field-assisted switching in magnetic tunnel junctions. , 2012, Nature materials.

[68]  S. Bandiera,et al.  Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection , 2011, Nature.

[69]  M. Fähnle,et al.  Electron theory of fast and ultrafast dissipative magnetization dynamics , 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

[70]  B. Diény,et al.  First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces , 2010, 1011.5667.

[71]  Jordan A. Katine,et al.  Nonuniform switching of the perpendicular magnetization in a spin-torque-driven magnetic nanopillar , 2011 .

[72]  Anthony Kos,et al.  Thermal relaxation rates of magnetic nanoparticles in the presence of magnetic fields and spin-transfer effects , 2011 .

[73]  R. P. Robertazzi,et al.  Effect of subvolume excitation and spin-torque efficiency on magnetic switching , 2011 .

[74]  J. Nowak,et al.  Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions , 2011 .

[75]  Seong-Ook Jung,et al.  Sensing margin trend with technology scaling in MRAM , 2011, Int. J. Circuit Theory Appl..

[76]  Y. J. Lee,et al.  Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node , 2011, 2011 International Electron Devices Meeting.

[77]  Anthony B. Kos,et al.  Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions , 2011 .

[78]  Stefano Curtarolo,et al.  Revealing low-temperature atomic ordering in bulk Co-Pt with the high-throughput ab-initio method , 2011 .

[79]  Anthony B. Kos,et al.  Validity of the thermal activation model for spin-transfer torque switching in magnetic tunnel junctionsa) , 2011 .

[80]  Robert A. Buhrman,et al.  Time-resolved measurement of spin-transfer-driven ferromagnetic resonance and spin torque in magnetic tunnel junctions , 2011 .

[81]  B. Dieny,et al.  Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions under Pulsed Conditions , 2012, 2012 4th IEEE International Memory Workshop.

[82]  A. P. Pyatakov,et al.  Magnetoelectric and multiferroic media , 2012 .

[83]  J. Katine,et al.  Precessional reversal in orthogonal spin transfer magnetic random access memory devices , 2012 .

[84]  Takayuki Kawahara,et al.  Spin-transfer torque RAM technology: Review and prospect , 2012, Microelectron. Reliab..

[85]  S. Mangin,et al.  Time-resolved magnetic relaxation of a nanomagnet on subnanosecond time scales , 2012 .

[86]  Hitoshi Kubota,et al.  Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer , 2012, Nature Physics.

[87]  W. Rippard,et al.  Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation , 2012, IEEE Transactions on Magnetics.

[88]  M. Gajek,et al.  Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy , 2012 .

[89]  Cyrile Deranlot,et al.  Highly efficient spin transport in epitaxial graphene on SiC , 2012 .

[90]  E. Chen,et al.  Progress and Prospects of Spin Transfer Torque Random Access Memory , 2012, IEEE Transactions on Magnetics.

[91]  H. Ohno,et al.  Current-induced torques in magnetic materials. , 2012, Nature materials.

[92]  Manuel Bibes,et al.  Nanoferronics is a winning combination. , 2012, Nature materials.

[93]  Ewelina M. Hankiewicz,et al.  Spin polarization of the quantum spin Hall edge states , 2012 .

[94]  R. Chepulskii,et al.  Ab initio magnetocrystalline anisotropy at nanoscale: The case of FePt , 2012 .

[95]  R. A. Buhrman,et al.  Network analyzer measurements of spin transfer torques in magnetic tunnel junctions , 2012 .

[96]  Dmytro Pesin,et al.  Spintronics and pseudospintronics in graphene and topological insulators. , 2012, Nature materials.

[97]  Xueti Tang,et al.  Spin-transfer torque magnetic random access memory (STT-MRAM) , 2013, JETC.