Analysis of the negative ion characteristics of O2 supermagnetron plasma for submicron etching use
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[1] T. Makabe,et al. Effect of Surface Material on Spatiotemporal Structure in O 2 RF Glow Discharge , 1995 .
[2] A. Lichtenberg,et al. Principles of Plasma Discharges and Materials Processing , 1994 .
[3] H. Kinoshita. Generation of high‐density O2 supermagnetron plasma over lower cathode by radio frequency power supply to upper cathode , 1994 .
[4] A. Howling,et al. Negative-Ion Mass-Spectra and Particulate Formation in Radio-Frequency Silane Plasma Deposition Experiments , 1993 .
[5] L. Overzet,et al. Negative and positive ions from CF4 and CF4/O2 rf discharges in etching Si , 1993 .
[6] W. Goedheer,et al. Relaxation phenomena after laser‐induced photodetachment in electronegative rf discharges , 1993 .
[7] H. Kinoshita,et al. Generation of high‐density O2 supermagnetron plasma for highly uniform plasma etching , 1992 .
[8] O. Matsumoto,et al. A new supermagnetron plasma etcher remarkably suited for high performance etching , 1991 .
[9] T. Kasuya,et al. Optogalvanic detection of negative ions in discharges , 1990 .
[10] H Amemiya,et al. REVIEW ARTICLE: Plasmas with negative ions-probe measurements and charge equilibrium , 1990 .
[11] Suzuki,et al. Optogalvanic study of photodetachment of O- near threshold. , 1987, Physical review. A, General physics.