Drude conductivity of highly doped GaAs at terahertz frequencies

Time domain spectroscopy has been used to measure the room temperature transmission of highly doped GaAs in the frequency range from 0.2 to above 3 THz. We studied n- and p-type layers, with carrier densities between 1016 and 2×1018 cm−3, which had been grown on undoped GaAs substrates. Transmission spectra could be fitted within experimental error by using a Drude model for the conductivity. Fitted carrier densities for both carrier types and mobilities for p-type GaAs were in good agreement with the results of Hall measurements. In the case of n-GaAs, the optically determined mobility appeared to underestimate slightly the Hall mobility.

[1]  C. E. Stutz,et al.  On Hall Scattering Factors for Holes in GaAs , 1996 .

[2]  Perkowitz,et al.  Raman-scattering spectra of coupled LO-phonon-hole-plasmon modes in p-type GaAs. , 1994, Physical review. B, Condensed matter.

[3]  Sidney Perkowitz,et al.  Optical characterization of semiconductors : infrared, raman, and photoluminescence spectroscopy , 1993 .

[4]  D. Grischkowsky,et al.  Observation of a Cole–Davidson type complex conductivity in the limit of very low carrier densities in doped silicon , 1998 .

[5]  Daniel R. Grischkowsky,et al.  Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy , 1998 .

[6]  Daniel R. Grischkowsky,et al.  Electrical characterization to 4 THz of N‐ and P‐type GaAs using THz time‐domain spectroscopy , 1992 .

[7]  S. R. Andrews,et al.  Coherent control of cyclotron emission from a semiconductor using sub-picosecond electric field transients , 1997 .

[8]  David C. Look,et al.  Electrical Characterization of GaAs Materials and Devices , 1989 .

[9]  J. W. Gibson,et al.  Infrared reflectance studies of bulk and epitaxial‐film n‐type GaAs , 1977 .

[10]  D. Averin,et al.  TASERs: Possible dc pumped terahertz lasers using interwell transitions in semiconductor heterostructures , 1994 .

[11]  Daniel R. Grischkowsky,et al.  Optical and electronic properties of doped silicon from 0.1 to 2 THz , 1990 .

[12]  D. Grischkowsky,et al.  Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors , 1990 .

[13]  John F. Federici,et al.  Intervalley scattering in GaAs and InP probed by pulsed far‐infrared transmission spectroscopy , 1992 .

[14]  Qing Hu,et al.  Feasibility of far‐infrared lasers using multiple semiconductor quantum wells , 1991 .

[15]  Emil Wolf,et al.  Principles of Optics: Contents , 1999 .

[16]  D. Mittleman,et al.  Noncontact semiconductor wafer characterization with the terahertz Hall effect , 1997 .

[17]  W. J. Moore,et al.  Infrared dielectric constant of gallium arsenide , 1996 .

[18]  R. Fukasawa,et al.  Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs , 1997 .

[19]  D. M. Szmyd,et al.  Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass , 1990 .