A Ka-band low noise amplifier in 0.15μm GaAs E-mode pHEMT technology

This paper presents Ka-band low noise amplifier in 0.15μm GaAs E-mode pHEMT Technology. The low noise amplifier has three-stage which used the microstrip line for low loss. The low noise amplifier input stage is a common source configuration for noise optimal matching. The proposed Ka-band Low Noise Amplifier is controlled only with single positive supply voltage. The measured result of the low noise amplifier shows the gain of 25.8 dB at 30 GHz and the simulated noise figure of 2 dB at 30 GHz. The proposed Ka-band low noise amplifier chip size is 1.7 x 0.8 mm2.

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