Overview of Mask Metrology

Extreme ultraviolet (EUV) lithography is the successor to optical lithography and will enable advanced patterning in semiconductor manufacturing processes down to the 8 nm half pitch technology node and beyond. However, before EUV can successfully be inserted into high volume manufacturing a few challenges must be overcome. Central among these remaining challenges is the requirement to produce “defect free” EUV masks. Mask blank defects have been one of the top challenges in the commercialization of extreme ultraviolet (EUV) lithography. To determine defect sources and devise mitigation solutions, detailed characterization of defects is critical. However, small defects pose challenges in metrology scale‐up. SEMATECH has a comprehensive metrology strategy to address any defect larger than a 20 nm core size to obtain solutions for defect‐free EUV mask blanks. SEMATECH's Mask Blank Development Center has been working since 2003 to develop the technology to support defect free EUV mask blanks. Since 2003, EUV...