Charge collection mechanisms in silicon devices during high-level carrier generation events
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[1] J.S. Laird,et al. The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors , 2007, IEEE Transactions on Nuclear Science.
[2] G.A. Sai-Halasz,et al. Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits , 1980, IEEE Electron Device Letters.
[3] Lloyd W. Massengill,et al. Basic mechanisms and modeling of single-event upset in digital microelectronics , 2003 .
[4] Corinna Cortes,et al. Support-Vector Networks , 1995, Machine Learning.
[5] T. R. Oldham,et al. Revised Funnel Calculations for Heavy Particles with High dE/dx , 1986, IEEE Transactions on Nuclear Science.
[6] D. Binder,et al. Satellite Anomalies from Galactic Cosmic Rays , 1975, IEEE Transactions on Nuclear Science.
[7] M. L. Alles,et al. Technology scaling and soft error reliability , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).
[8] J. S. Kauppila,et al. Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients , 2012, IEEE Transactions on Nuclear Science.
[9] Nello Cristianini,et al. An Introduction to Support Vector Machines and Other Kernel-based Learning Methods , 2000 .
[10] J. C. Pickel,et al. Single-event effects rate prediction , 1996 .
[11] P. Sheng,et al. Knife-edge scanning measurements of subwavelength focused light beams. , 1977, Applied optics.
[12] peixiong zhao,et al. Monte Carlo Simulation of Single Event Effects , 2010, IEEE Transactions on Nuclear Science.
[13] L. D. Edmonds,et al. A simple estimate of funneling-assisted charge collection , 1991 .
[14] L.W. Massengill,et al. Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design , 2005, IEEE Transactions on Nuclear Science.
[15] L. D. Edmonds,et al. The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices , 2012, IEEE Transactions on Nuclear Science.
[16] James H. Adams,et al. Cosmic Ray Effects on Microelectronics. Part 4 , 1986 .
[17] P. Giommi,et al. Detection of the Characteristic Pion-Decay Signature in Supernova Remnants , 2013, Science.
[18] Peter Meyer,et al. Cosmic rays—astronomy with energetic particles , 1974 .
[19] Paul E. Dodd,et al. Device simulation of charge collection and single-event upset , 1996 .
[20] D. McMorrow,et al. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM , 2005, IEEE Transactions on Nuclear Science.
[21] A. Johnston,et al. Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices , 2006, IEEE Transactions on Nuclear Science.
[22] V. Pouget,et al. 3D knife-edge characterization of two-photon absorption volume in silicon for integrated circuit testing. , 2011, Optics express.
[23] Larry D. Edmonds,et al. Charge collection from ion tracks in simple EPI diodes , 1997 .
[24] B.L. Bhuva,et al. Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS , 2007, IEEE Transactions on Nuclear Science.
[25] William Geoffrey Bennett. Single event upset mechanisms in emerging memory technologies , 2014 .
[26] Tristan Fletcher,et al. Support Vector Machines Explained , 2008 .
[27] R. R. O'Brien,et al. A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices , 1981, IEEE Electron Device Letters.
[28] J. Ziegler,et al. SRIM – The stopping and range of ions in matter (2010) , 2010 .
[29] R. D. Schrimpf,et al. SEL-Sensitive Area Mapping and the Effects of Reflection and Diffraction From Metal Lines on Laser SEE Testing , 2013, IEEE Transactions on Nuclear Science.
[30] Marek Turowski,et al. Single-event effects in advanced CMOS technologies - Analysis and mitigation , 2015, MIXDES.
[31] Dale McMorrow,et al. Single Event Transients in Linear Integrated Circuits , 2005 .
[32] F. W. Sexton,et al. Destructive single-event effects in semiconductor devices and ICs , 2003 .
[33] H. L. Grubin,et al. Numerical Studies of Charge Collection and Funneling in Silicon Device , 1984, IEEE Transactions on Nuclear Science.
[34] G. Vizkelethy,et al. Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials , 2009, IEEE Transactions on Nuclear Science.
[35] peixiong zhao,et al. Single Event Mechanisms in 90 nm Triple-Well CMOS Devices , 2008, IEEE Transactions on Nuclear Science.
[36] Larry D Edmonds. A Proposed Transient Version of the ADC Charge-Collection Model Tested Against TCAD , 2011, IEEE Transactions on Nuclear Science.
[37] L. D. Edmonds,et al. A Theoretical Analysis of the Role of Ambipolar Diffusion in Charge-Carrier Transport in a Quasi-Neutral Region Under High Injection , 2011, IEEE Transactions on Nuclear Science.
[38] Larry D. Edmonds,et al. Quenching of impact ionization in heavy-ion induced electron-hole pair plasma tracks in wide bandwidth avalanche photodetectors , 2010 .
[39] A. B. Campbell,et al. Charge Collection Measurements for Energetic Ions in Silicon , 1982, IEEE Transactions on Nuclear Science.
[40] Larry D Edmonds,et al. A Theoretical Analysis of Steady-State Charge Collection in Simple Diodes Under High-Injection Conditions , 2010, IEEE Transactions on Nuclear Science.
[41] L. D. Edmonds. Extension of the ADC Charge-Collection Model to Include Multiple Junctions , 2011, IEEE Transactions on Nuclear Science.
[42] R.A. Reed,et al. Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry , 2008, IEEE Transactions on Nuclear Science.
[43] Theodore I. Kamins,et al. Device Electronics for Integrated Circuits , 1977 .
[44] O. Musseau. Semi-empirical modelization of charge funneling in a np diode , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
[45] V. Pouget,et al. Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL , 2011, IEEE Transactions on Nuclear Science.
[46] D. McMorrow,et al. Demonstration of single-event effects induced by through-wafer two-photon absorption , 2004, IEEE Transactions on Nuclear Science.
[47] T. R. Oldham,et al. Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon , 1983, IEEE Transactions on Nuclear Science.
[48] G. C. Messenger,et al. Collection of Charge on Junction Nodes from Ion Tracks , 1982, IEEE Transactions on Nuclear Science.
[49] Larry D. Edmonds. A time-dependent charge-collection efficiency for diffusion , 2001 .
[50] L. W. Massengill,et al. Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS , 2011, IEEE Transactions on Nuclear Science.
[51] B.L. Bhuva,et al. Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational Logic , 2007, IEEE Transactions on Nuclear Science.
[52] W. T. Holman,et al. Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes , 2007, IEEE Transactions on Nuclear Science.
[53] B. L. Bhuva,et al. Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients , 2011, IEEE Transactions on Nuclear Science.
[54] A.F. Witulski,et al. Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing , 2007, IEEE Transactions on Nuclear Science.
[55] D. Hastings,et al. Spacecraft–Environment Interactions: Index , 1996 .
[56] T. May,et al. Alpha-particle-induced soft errors in dynamic memories , 1979, IEEE Transactions on Electron Devices.
[57] L. W. Massengill,et al. Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies , 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).
[58] L. W. Massengill,et al. Three-dimensional mapping of single-event effects using two photon absorption , 2003 .
[59] S. Kirkpatrick. Modeling diffusion and collection of charge from ionizing radiation in silicon devices , 1979, IEEE Transactions on Electron Devices.
[60] N. Hooten,et al. The Effect of High-Z Materials on Proton-Induced Charge Collection , 2010, IEEE Transactions on Nuclear Science.
[61] E. Simoen,et al. Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs , 2011, IEEE Transactions on Nuclear Science.
[62] J. McKelvey,et al. Solid State and Semiconductor Physics , 1966 .
[63] A.F. Witulski,et al. Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology , 2007, IEEE Transactions on Nuclear Science.
[64] P. S. Winokur,et al. Three-dimensional simulation of charge collection and multiple-bit upset in Si devices , 1994 .
[65] J. R. Schwank,et al. Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance , 2013, IEEE Transactions on Nuclear Science.
[66] R. R. O'Brien,et al. Collection of charge from alpha-particle tracks in silicon devices , 1983, IEEE Transactions on Electron Devices.
[67] Chih-Jen Lin,et al. A Practical Guide to Support Vector Classication , 2008 .
[68] J. Baggio,et al. Transient Response of Semiconductor Electronics to Ionizing Radiation. Recent Developments in Charge-Collection Measurement , 2007, IEEE Transactions on Nuclear Science.
[69] M. R. Pinto,et al. Numerical simulation of heavy ion charge generation and collection dynamics , 1993 .
[70] R. Pease,et al. Subbandgap laser-induced single event effects: carrier generation via two-photon absorption , 2002 .
[71] G. Gasiot,et al. Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering , 2007, IEEE Transactions on Nuclear Science.
[72] G. Bruguier,et al. Single particle-induced latchup , 1996 .
[73] P.E. Dodd,et al. Physics-based simulation of single-event effects , 2005, IEEE Transactions on Device and Materials Reliability.
[74] K. Golke,et al. Determination of funnel length from cross section versus LET measurements , 1993 .
[75] T. R. Oldham,et al. Charge Funneling in N- and P-Type Si Substrates , 1982, IEEE Transactions on Nuclear Science.
[76] Guillaume Hubert,et al. Study of basic mechanisms induced by an ionizing particle on simple structures , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).
[77] J. Tukey,et al. Variations of Box Plots , 1978 .
[78] Larry D. Edmonds,et al. Electric currents through ion tracks in silicon devices , 1998 .