论文信息 - Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.

[1] Kenneth A. LaBel,et al. Particle-induced bit errors in high performance fiber optic data links for satellite data management , 1994 .

[2] E. G. Stassinopoulos,et al. Physical interactions between charged particles and optoelectronic devices and the effects on fiber-based data links , 1993, Defense, Security, and Sensing.

[3] E. Normand,et al. Single event upset and charge collection measurements using high energy protons and neutrons , 1994 .

[4] Soft fails in microelectronic circuits due to proton-induced nuclear reactions in material surrounding the SEU-sensitive volume☆ , 1989 .

[5] E. Normand,et al. Quantitative comparison of single event upsets induced by protons and neutrons (RAM devices) , 1991 .

[6] Kenneth A. LaBel,et al. Survivable fiber-based data links for satellite radiation environments , 1993, Optics East.

[7] Cheryl J. Dale,et al. Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus , 1992 .

[8] E. Normand,et al. Incorporation of ENDF-V neutron cross section data for calculating neutron-induced single event upsets , 1989 .

[9] Wojtek Hajdas,et al. On the angular dependence of proton induced events and charge collection [SRAMs] , 1994 .