A sub-1V bandgap voltage reference in 32nm FinFET technology
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[1] A. Hikavyy,et al. Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography , 2007, 2007 IEEE Symposium on VLSI Technology.
[2] J.Y.-C. Sun,et al. CMOS-on-SOI ESD protection networks , 1996, 1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium.
[3] T. R. Viswanathan,et al. A CMOS bandgap reference without resistors , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
[4] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[5] F. Lombardi,et al. A CMOS subbandgap reference circuit with 1-v power supply voltage , 2004, IEEE Journal of Solid-State Circuits.
[7] G. Gildenblat,et al. PSP-based compact FinFET model describing dc and RF measurements , 2006, 2006 International Electron Devices Meeting.
[8] G. Knoblinger,et al. Design and evaluation of basic analog circuits in an emerging MuGFET technology , 2005, 2005 IEEE International SOI Conference Proceedings.
[9] E.C. Dijkmans. Hearing instruments go digital , 1997, Proceedings of the 23rd European Solid-State Circuits Conference.
[10] K. Sakui,et al. A CMOS bandgap reference circuit with sub-1-V operation , 1999 .