Metal–Semiconductor Transition of La2NiO4+δ

The excess oxygen concentrations of La2NiO4+δhave been measured in 0.00–6.06, 13.33–18.25, or 66.66–71.40 kPa of oxygen in the range 300–1273 K by the desorption method. The electrical conductivities of La2NiO4+δhave been also measured in 1.33, 13.33, 66.66, or 101.33 kPa of oxygen in the range 77.4–1273 K or under a helium atmosphere (1 atm) in the range 77.4–300 K. The mechanism of the metal–semiconductor transition of La2NiO4+δis discussed on the basis of the excess oxygen concentration and the electrical conductivity data. The metal–semiconductor transition of La2NiO4+δis explained by the carrier concentration and the activation energy changes associated with the incorporation of excess oxygen.

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