Node connection/quantum phase-shifting mask-path to below 0.3-/spl mu/m pitch, proximity effect free random interconnect and memory patterning

New design concepts for alternating phase-shifting masks are proposed which enable the alternating PSMs to be applied to random patterns with the least design restrictions and reduced proximity effects. Original design patterns are decomposed to several sub-patterns using geometrical operations, so that each sub-pattern can be achieved by the alternating type PSMs. The possibility of patterning sub-0.3 /spl mu/m pitch random interconnects with conventional DUV tools is shown.