Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processes

Abstract Non-photolithographic organic thin film transistors (OTFTs) were fabricated using pentacene and SiN x films on p-Si (1 0 0) at room temperature to investigate both the effects of their device structure (two different types of OTFTs, top-electrode and bottom-electrode) and the pentacene film deposition-rate on their current–voltage characteristics. OTFTs of the top-electrode type were prepared by thermal evaporation at various deposition rates of 1, 3, 5 and 7 A/s. The top-electrode OTFTs exhibited 40 times higher amount of currents than the bottom-electrode OTFTs at the same bias conditions. An optimum OTFT was obtained using 5 A/s and exhibited the saturation current, I D of approximately 4 μA at a gate bias of −40 V along with the field effect mobility of ∼0.046 cm 2 /V s and the on/off current ratio of ∼10 5 .

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